BAS86 PHILIPS | Alldatasheet

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Technical content

Product specification Supersedes data of 1996 Mar 20

1996 Oct 01

1996 Oct 01 2

Philips Semiconductors Product specification Schottky barrier diode BAS86

FEATURES

  • Low forward voltage
  • High breakdown voltage
  • Guard ring protected
  • Hermetically-sealed small SMD package.

APPLICATIONS

  • Ultra high-speed switching
  • Voltage clamping
  • Protection circuits
  • Blocking diodes.

DESCRIPTION

Planar Schottky barrier diode with an integrated protection ring against static discharges. This surface mounted diode is encapsulated in a hermetically sealed SOD80C glass SMD package with tin-plated metal discs at each end. It is suitable for “automatic placement” and as such it can withstand immersion soldering. Fig.1 Simplified outline (SOD80C), pin configuration and symbol. handbook, halfpage MAM190 ka Cathode indicated by a grey band. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VR continuous reverse voltage − 50 V IF continuous forward current − 200 mA IF(AV) average forward current see Fig.2 − 200 mA IFRM repetitive peak forward current t p ≤ 1 sec.;δ≤ 0.5 − 500 mA IFSM non-repetitive peak forward current tp =1 0m s 5 A Tstg storage temperature −65 +150 °C Tj junction temperature − 125 °C Tamb operating ambient temperature −65 +125 °C

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Philips Semiconductors Product specification Schottky barrier diode BAS86

ELECTRICAL CHARACTERISTICS

Tamb =2 5°C unless otherwise specified. Note 1. Pulsed test: tp = 300µs;δ = 0.02. THERMAL CHARACTERISTICS Note 1. Refer to SOD80 standard mounting conditions. SYMBOL PARAMETER CONDITIONS MAX. UNIT VF forward voltage see Fig.3 IF = 0.1 mA 300 mV IF =1m A 380 mV IF =1 0m A 450 mV IF =3 0m A 600 mV IF = 100 mA 900 mV IR reverse current V R = 40 V; see Fig.4; note 1 5 µA trr reverse recovery time when switched from I F = 10 mA to IR = 10 mA; R L = 100Ω ; measured at IR = 1 mA; see Fig.6 4n s C d diode capacitance f = 1 MHz; V R = 1 V; see Fig.5 8p F SYMBOL PARAMETER CONDITIONS VALUE UNIT R th j-a thermal resistance from junction to ambient note 1 320 K/W

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Philips Semiconductors Product specification Schottky barrier diode BAS86 GRAPHICAL DATA Fig.2 Derating curve. handbook, halfpage 100 150 200 250 0 50 100 150 IF(AV) (mA) T ( C)amb o MRA540 Fig.3 Forward current as a function of forward voltage; typical values. handbook, halfpage10 IF VF (V) (mA) 10 1 1.20.80.40 MSA892 (3)(2)(1) (3)(2)(1) (1) Tamb = 125°C. (2) Tamb =8 5°C. (3) Tamb =2 5°C. (1) Tamb =8 5°C. (2) Tamb =2 5°C. (3) Tamb = −40 °C. handbook, halfpage105 (nA) IR 103 102 500 MGC686 10 20 30 40 VR (V) (1) (2) (3) Fig.4 Reverse current as a function of reverse voltage; typical values. f = 1 MHz. Fig.5 Diode capacitance as a function of reverse voltage; typical values. handbook, halfpage 05 0 C d (pF) MGC687 10 20 30 40 VR (V)

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Philips Semiconductors Product specification Schottky barrier diode BAS86 Fig.6 Reverse recovery definitions. handbook, halfpage 90% 10% tf Q dI dt t IF IR MRC129 - 1 F r

1996 Oct 01 6

Philips Semiconductors Product specification Schottky barrier diode BAS86 PACKAGE OUTLINE DEFINITIONS LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification. Dimensions in mm. Cathode indicated by a grey band. Fig.7 SOD80C. handbook, full pagewidth MBA390 - 2 1.60 1.45 3.7 3.3 0.3 0.3 O