BAS86 GOOD-ARK | Alldatasheet
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scitsiretcarahClamrehTdnasgnitaRmumixaM (TA=25oC unless otherwise noted.) For general purpose applications. This diode features low turn-on voltage. This device are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast switching and low logic level applications. This diode is also available in the DO-35 case with type designation BAT86. Case: MiniMELF Glass Case (SOD-80) Weight: approx. 0.05g Cathode Band Color: Green 68SAB edoiDlangiS-llamS edoiDykttohcS retemaraPl obmySe ulaVt inU egatlovesreversuounitnoCV R 05s tloV TtatnerrucsuounitnocdrawroF bma 52= oCI F 002 )1( Am tnerrucdrawrofkaepevititepeR ,s1<ptta υ< T,5.0 bma 52= oC I MRF 005 )1( Am TtanoitapissidrewoP bma 52= oCP tot 002 )1( Wm riatneibmaotnoitcnujecnatsiserlamrehTR θ AJ 003 )1(o W/C erutarepmetnoitcnuJT j 521 oC egnarerutarepmetgnitarepotneibmAT bma 521+ot56- oC egnarerutarepmetegarotST S 051+ot56- oC 699 Notes: 1. Valid provided that electrodes are kept at ambient temperature.
(TJ=25oC unless otherwise noted.) retemaraPl obmySn oitidnoCtseT. niM. pyT. xaMt inU egatlovnwodkaerbesreveRV R)RB( IR 01= u )deslup(A0 5- - s tloV tnerrucegakaeLI R VR V52=- 2 .05 .0 uA egatlovdrawroFV F 003<pttseTesluP u ,s δ %2< IF Am1.0= IF Am1= IF Am01= IF Am03= IF Am001= 002.0 572.0 563.0 064.0 007.0 003.0 083.0 054.0 006.0 009.0 tloV ecnaticapaCC tot VR zHM1=f,V1=- - 8 pF emityrevoceresreveRt rr IF I,Am01= R ,Am01= IR Am1= --5 ns