BAS85 RECTRON | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 1
Technical content
MAXIMUM RATINGES ( @ TA = 25oC unless otherwise noted ) SC H O TTK Y D IO D ES FEATU R ES * Fast Sw itching D evice(TR R <4.0nS) * M ini M E LF G lass C ase (S O D -80) Through-H ole D evice Type M ounting H erm etically Sealed G lass C om pression B onded C onstruction A ll external surfaces are corrosion resistant and leads are readily solderable D im ensions in inches and (m illim eters) R A TIN G S M axim um Forw ard C om tinuous C urrent @ TA =25 O C M axim um Forw ard C om tinuous R everse V oltage S urge Forw ard C urrent @ tp<1s,TA =25 O C M axim um P ow er D issipation @ TA =65 O C S torage Tem perature R ange Junction Tem perature S Y M B O L B A S 85 m Am ps V 200 M axim um P eak Forw ard C urrent @ TA =25 O C m Am ps300 600 200 125 -65 to + 150 m Am ps m W O C O C U N ITS IF VR IFM IFSM PD TSTG SOD-80 2006-3 ELECTRICAL CHARACTERISTICS ( @ TA = 25oC unless otherwise noted ) Reverse voltage leakage current (VR=25V) Forward voltage Pulse Tesx tp<300µs,δ<2% (IF=10mA) (IF=1mA) (IF=0.1mA) (IF=30mA) (IF=100mA) Diode capacitance (VR=1,f=1MHz) Reveres recovery time (IF=IR=10mA,IR=1mA) CHARACTERISTICS SYMBOL UNITS 0.24 0.4 0.32 0.8 0.5 µA V V pF nS Reverse breakdown voltage (IR=10µA) V(BR)R IR VF CD trr MAX. TYP. MIN. M A X IM U M R ATIN G S A N D E LE C TR IC A L C H A R A C TE R IS TIC S R atings at 25 o C am bient tem perature unless otherw ise specified. S ingle phase, half w ave, 60 H z, resistive or inductive load. For capacitive load, derate current by 20% . .016(0.40) .059(1.5) .055(1.4) .008(0.20) .142(3.6) .134(3.4) TJ