BAS85 DIODES | Alldatasheet
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SILICON SCHOTTKY BARRIER DIODE /c183For general applications /c183Low turn-on voltage /c183PN junction guard ring Characteristic Symbol Value Unit Continuous reverse voltage VR 30 V Forward continuous current* IF 200 mA Peak forward current* IFM 300 mA Surge forward current* @ tp = 1s IFSM 600 mA Power dissipation* @ TA = 65/c176C Ptot 200 mW Junction temperature Tj 125 /c176C Operating temperature range TA -65 to +125 /c176C Storage temperature range TSTG -65 to +150 /c176C Maximum Ratings @ TA = 25/c176C unless otherwise specified * Valid provided that electrodes are kept at ambient temperature. Characteristic Symbol Min Typ Max Unit Reverse breakdown voltage 10 /c109A pulses V (BR)R 30 — — V Electrical Characteristics @ Tj = 25/c176C unless otherwise specified /c183Glass case /c183Weight: 0.05g (approx) Mechanical Data C A B Min Max A 3.4 3.6 B 1.40 1.50 C 0.20 0.40 All Dimensions in mm