BAS70 AITSEMI | Alldatasheet
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AiT Semiconductor Inc. www.ait-ic.com BAS70 SCHOTTKY DIODES 70mA, 70V REV1.0 - FEB 2019 RELEASED - - 1 - DESCRIPTION FEATURES 70mA Planar Schottky barrier diodes with an integrated guard ring for stress protection. Single diodes and double diodes with different pinning are available. The BAS70 is available in SOT-23 package ⚫ Low Turn-on Voltage ⚫ Fast Switching ⚫ Low forward current ⚫ High breakdown voltage ⚫ Guard ring protected ⚫ Low diode capacitance. ⚫ Available in SOT-23 package
ORDERING INFORMATION
Note SPQ: 3,000pcs/Reel AiT provides all RoHS Compliant Products
APPLICATIONS
⚫ Ultra high-speed switching ⚫ Voltage clamping ⚫ Protection circuits. ⚫ Blocking diodes. PIN DESCRIPTION BAS70-05 double diode. BAS70-06 double diode. BAS70 single diode. BAS70-04 double diode.
AiT Semiconductor Inc. www.ait-ic.com BAS70 SCHOTTKY DIODES 70mA, 70V REV1.0 - FEB 2019 RELEASED - - 2 - ABSOLUTE MAXIMUM RATINGS TA = 25°C VR, Continuous Reverse Voltage 70V IF, Continuous Forward Current 70mA IFSM, Repetitive Peak Forward Surge Current (tp≦1s; δ≦0.5) 70mA IFSM, Non-Repetitive Peak Forward Current (tp<10ms) 100mA TSTG, Storage Temperature -65~+150°C TJ, Junction Temperature 150°C TAMB, Operating Ambient Temperature -65~+150°C Stresses above may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated in the Electrical Characterist ics are not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
ELECTRICAL CHARACTERISTICS
TA = 25°C Parameter Symbol Conditions Max. Unit Forward Voltage (Fig.1) VF IF=1mA IF=10mA IF=15mA 410 750 mV mV V Reverse Current (Fig.2)NOTE1 IR VR=50V VR=70V 100 nA μA Charge Carrier Life Time (krakauer method) IF=5mA 100 ps Diode Capacitance (Fig.4) Cd f=1MHz;VR=0 2 pF NOTE1: Pulse test: tp=300μs;δ=0.02. THERMAL CHARACTERISTICS Parameter Symbol Value Unit Thermal Resistance from Junction to Ambient Rth j-a 500 k/w
AiT Semiconductor Inc. www.ait-ic.com BAS70 SCHOTTKY DIODES 70mA, 70V REV1.0 - FEB 2019 RELEASED - - 4 -
PACKAGE INFORMATION
Dimension in SOT-23 Package (Unit: mm) DIM MILLIMETERS INCHES MIN MAX MIN MAX A 2.80 3.04 0.1102 0.1197 B 1.20 1.40 0.0472 0.0551 C 0.89 1.11 0.0350 0.0440 D 0.37 0.50 0.0150 0.0200 G 1.78 2.04 0.0701 0.0807 H 0.013 0.100 0.0005 0.0040 J 0.085 0.177 0.0034 0.0070 K 0.35 0.69 0.0140 0.0285 L 0.89 1.02 0.0350 0.0401 S 2.10 2.64 0.0830 0.1039 V 0.45 0.60 0.0177 0.0236
AiT Semiconductor Inc. www.ait-ic.com BAS70 SCHOTTKY DIODES 70mA, 70V REV1.0 - FEB 2019 RELEASED - - 5 - IMPORTANT NOTICE AiT Semiconductor Inc. (AiT) reserves the rig ht to m ake cha nges to any its product, specifications, to discontinue any integrated circuit product or service without notice, and ad vises its customers to obtain the latest version of relevant information to verify, before placing orders, that the inform ation being relied on is current. AiT Semiconductor Inc. 's integrated circuit products are not designed, intended, authorized, or war ranted to be suitable for use in life support applications, devices or syst ems or other critical applications. Use of AiT products in such applications is understood to be fully at the risk of the customer. As used herein may involve potential risks of de ath, personal injury, or server e property, or environmental damage. In order to minimize risks associated with the customer 's appl ications, the customer should provide adequate design and operating safeguards. AiT Semiconductor Inc . assumes to no liability to customer product design or application support. AiT warrants the performance of its products of the specifications applicable at the time of sale.