BAS70_14 TSC | Alldatasheet

Document overview

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Technical content

  • Low turn-on voltage - Fast switching - PN junction guard ring for transient and ESD protection - Case: SOT- 23, molded plastic - Terminal: Matte tin plated, lead free, solderable per MIL-STD-202, Method 208 guaranteed - High temperature soldering guaranteed: 260 oC/10s - Weight: 0.008grams (approximately) SYMBOL UNIT VRRM VRWM VR VR(RMS) V IF mA IFSM mA PD mW R θJA K/W TJ °C TSTG °C SYMBOL UNIT V(BR) V IR nA C J pF trr ns Notes: 1. Valid provided that terminals are kept at ambient temperature 2. Test period ＜ 3000 µs Document Number: DS_S1404012 Version: E14 Reverse leakage current PARAMETER mV PARAMETER VFForward voltage

FEATURES

Reverse revovery time I F = I R = 10 mA, I RR = 100 Ω, I RR = 1 mA Reverse breakdown voltage IR = 10 µA tp=300 µs , I F=1.0mA 100.00 70 - 2Junction capacitance VR = 0 V, f = 1 MHz tp ＜300 µs , I F=15mA tp ＜300 µs , V R =50V 225mW SMD Switching Diode MAXIMUM RATINGS AND ELECTRICAL CHARACTERSTICS (T A=25 ℃ unless otherwise noted) 1000 - Operating Junction Temperature Thermal Resistance Junction to Ambient Air Non-Repetitive Peak Forward Surge Current Power Dissipation Forward Continuous Current @ t ≦ 1.0 s Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage (Note 1) (Note 1) Storage Temperature Range 100 -55 to + 125 -55 to + 150 V70 RMS Reverse Voltage 49 (Note 1)

(TA=25 ℃ unless otherwise noted) Document Number: DS_S1404012 Small Signal Product Taiwan Semiconductor Version: E14 RATINGS AND CHARACTERISTICS CURVES 100 200 0 25 50 75 100 125 PD - Power Dissipation (mW) TA - Ambient Temperature ( oC) Fig.1 Power Derating Curve 100 1 10 100 Peak Forward Surge Current (mA) Numbers of Cycles at 60 Hz Fig. 2 Maximum Non-Repetitve Peak Forward Surge Current Per Leg 8.3 ms single half sine wave (JEDEC Method) 0.1 100 Instantaneous Forward Current (mA) VF, Instantaneous Forward Voltage (V) Fig. 3 Typical Forward Characteristics TA= -40 °C TA= 0 °C TA= 25 °C TA= 75 °C 0.1 100 1000 10000 0 10 20 30 40 IR - Instantaneous Reverse Current (nnA) VR - Reverse Voltage (V) Fig. 4 Typical Reverse Characteristics TA=125 °C TA=70 °C TA=25 °C TA=0 °C TA= -40 °C 0 5 10 15 20 Junction Capacitance (pF) Reverse Voltage (V) Fig. 5 Typical Total Capacitance VS. Reverse Voltage f=1.0MHz 0.1 100 0.01 0.1 1 10 100 Transient Thermal Impedance ( oC/W) Pulse Duration (sec) Fig. 6 Typical Transient Thermal Characteristics

ORDERING INFORMATION

PART NO. BAS70 BAS70-04 BAS70-05 BAS70-06 PART NO. BAS70 BAS70 BAS70 Document Number: DS_S1404012 Taiwan Semiconductor Version: E14 Green compound Green compound Green compound RF MARKING

76 SOT-23

RF G SOT-23 3K / 7" Reel (Note) RF G SOT-23 3K / 7" Reel RF G SOT-23 3K / 7" Reel BAS70-D0 RFG GD0 RF BAS70 RFG G BAS70-B0 RFG GB0 RF RF Note: Manufacture special control, if empty means no special control requirement. PREFERRED P/N GREEN COMPOUND CODE MANUFACTURE CODE PACKING CODE EXAMPLE

DESCRIPTION

3K / 7" Reel G Small Signal Product PACKING CODE GREEN COMPOUND CODE PACKAGE PACKING MANUFACTURE CODE

A 2.70 3.10 0.106 0.122 B 1.10 1.50 0.043 0.059 C 0.30 0.51 0.012 0.020 D 1.78 2.04 0.070 0.080 E 2.10 2.64 0.083 0.104 F 0.89 1.30 0.035 0.051 G H SUGGEST PAD LAYOUT Z X Y C E Pin Configuration BAS70-04 BAS70-05 Document Number: DS_S1404012 2.0 0.079 1.35 0.053 Version: E14 DIM. Unit (mm) Unit (inch) 0.55 REF 0.022 REF 0.1 REF 0.004 REF Unit (inch) Typ. Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS Small Signal Product BAS70 Typ. 2.9 0.114 BAS70-06 DIM. Unit (mm) 0.8 0.031 0.9 0.035