BAS70-04_15 KEXIN | Alldatasheet
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www.kexin.com.cn 1 Diodes Schottky Diodes ■ Features
- Fast Switching Speed
- High breakdown voltage 0.4+0.1 -0.1 2.9+0.1 -0.1 0.95+0.1 -0.1 1.9+0.1 -0.1 2.4+0.1 -0.1 1.3+0.1 -0.1 0-0.1 0.38+0.1 -0.1 0.97+0.1 -0.1 0.55 0.4 1 2 Unit: mmSOT-23 0.1+0.05 -0.01 BAS70 single diode. n.c. BAS70-06 1 2 BAS70-05 1 2 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Reverse Voltage VRM 70 V Peak Reverse Voltage VRRM 70 Average Rectified Current at Temp=25℃ IFAV 70 Non-Repetitive Peak Forward Surge Current t=1s IFSM 100 Power Dissipation Pd 215 mW Thermal Resistance Junction to Ambient RθJA 500 ℃/W Junction Temperature TJ 150 Storage Temperature range Tstg -55 to 150 mA ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Reverse breakdown voltage VR IR= 10 uA 70 VF1 IF= 1 mA 0.41 VF2 IF= 10 mA 0.75 VF3 IF= 15 mA 1 IR1 VR= 70 V 1 IR2 VR= 50 V 0.1 Junction capacitance Cj VR= 0 V, f= 1 MHz 2 pF Forward voltage V Reverse voltage leakage current uA ■ Marking BAS70-04 1 2 NO. BAS70 BAS70-04 BAS70-05 BAS70-06 Marking 73P* 74P* 75P* 76P*
www.kexin.com.cn2 Diodes Schottky Diodes ■ Typical Characterisitics (1) Tamb = 125 °C. (2) Tamb = 85 °C. (3) Tamb = 25 °C. (4) Tamb = −40 °C. Fig.1 Forward current as a function of forward voltage; typical values. 0 0.2 0.4 0.6 0.8 1 IF (mA) V (V)F (1) (4)(2) (3) 102 10 1 10 2 (1) Tamb = 150 °C. (2) Tamb = 85 °C. (3) Tamb = 25 °C. Fig.2 Reverse current as a function of reverse voltage; typical values. 0 20 40 60 80 V (V)R IR (µA) (1) (3) (2) 10 1 10 2 10 3 f = 10 kHz. Fig.3 Differential forward resistance as a function of forward current; typical values. 1 10 rdif (Ω) IF (mA)10−1 102 102 103 Fig.4 Diode capacitance as a function of reverse voltage; typical values. f = 1 MHz. 0.5 1.5 0 20 40 60 80 Cd (pF) V (V)R