BAS70-00-V

BAS70-00-V_10 VISHAY | Alldatasheet

Document overview

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Technical content

Features

• These diodes feature very low turn-on voltage and fast switching  These devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges  AEC-Q101 qualified  Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC Mechanical Data Case: SOT-23 Weight: approx. 8.8 mg Packaging Codes/Options: GS18 / 10 k per 13" reel (8 mm tape), 10 k/box GS08 / 3 k per 7" reel (8 mm tape), 15 k/box Parts Table Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified 1) Device on fiberglass substrate, see layout on next page Thermal Characteristics Tamb = 25 °C, unless otherwise specified 1) Device on fiberglass substrate, see layout on next page Part Ordering code Type Marking Remarks BAS70-00-V BAS70-00-V-GS18 or BAS70-00-V-GS08 73 Tape and Reel BAS70-04-V BAS70-04-V-GS18 or BAS70-04-V-GS08 74 Tape and Reel BAS70-05-V BAS70-05-V-GS18 or BAS70-05-V-GS08 75 Tape and Reel BAS70-06-V BAS70-06-V-GS18 or BAS70-06-V-GS08 76 Tape and Reel Parameter Test condition Symbol Value Unit Repetitive peak reverse voltage VRRM = VRWM = VR 70 V Forward continuous current IF 2001) mA Surge forward current tp < 1 s I FSM 6001) mA Power dissipation1) Ptot 2001) mW Parameter Test condition Symbol Value Unit Thermal resistance junction to ambient air RthJA 5001) K/W Junction temperature Tj 125 °C Storage temperature range Tstg - 65 to + 150 °C

www.vishay.com Document Number 85702 Rev. 1.8, 05-Aug-10 BAS70-00-V to BAS70-06-V Vishay Semiconductors For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

Electrical Characteristics

Tamb = 25 °C, unless otherwise specified 1) Pulse test; tp ≤ 300 μs Layout for RthJA test Thickness: Fiberglass 1.5 mm (0.059 in.) Copper leads 0.3 mm (0.012 in.) Parameter Test condition Symbol Min Typ. Max Unit Reverse breakdown voltage IR = 10 μA (pulsed) V(BR) 70 V Leakage current VR = 50 V IR 20 100 nA Forward voltage IF = 1.0 mA VF 410 m V Forward voltage1) IF = 15 mA, VF 1000 m V Diode capacitance VR = 0 V, f = 1 MHz C D 1.5 2 pF Reverse recovery time IF = IR = 10 mA, iR = 1 mA, RL = 100 Ω trr 5n s 17451 15 (0.59) 12 (0.47) 0.8 (0.03) 5 (0.2) 7.5 (0.3) 3 (0.12) 1 (0.4) 1 (0.4) 2 (0.8) 2 (0.8) 1.5 (0.06) 5.1 (0.2)

Rev. 1.8, 05-Aug-10 Vishay Semiconductors www.vishay.com For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Package Dimensions in millimeters (inches): SOT-23 Foot print recommendation: Rev. 8 - Date: 23.Sept.2009 17418 Document no.: 6.541-5014.01-4 0.9 (0.035) 1 (0.039) 0.9 (0.035) 1 (0.039) 1.43 (0.056) 0.45 (0.018) 0.35 (0.014) 2.8 (0.110) 3.1 (0.122) 0.45 (0.018) 0.35 (0.014) 0.45 (0.018) 0.35 (0.014) 0.1 (0.004) max. 2.35 (0.093) 2.6 (0.102) 0.175 (0.007) 0.098 (0.004) 1.15 (0.045) 0.9 (0.035) 1.20 (0.047) 0.7 (0.028) 0.9 (0.035) 0° to 8° 0.2 (0.008) 0.3 (0.012) 0.5 (0.020) 0.550 ref. (0.022 ref.)

Vishay Semiconductors SOT-23 Document Number: 84004 For technical ques tions within your region, please contact one of the following: www.vishay.com PACKAGE DIMENSIONS in millimeters (inches) Foot print recommendation: Rev. 8 - Date: 23.Sept.2009 17418 Document no.: 6.541-5014.01-4 0.9 (0.035) 1 (0.039) 0.9 (0.035) 1 (0.039) 1.43 (0.056) 0.45 (0.018) 0.35 (0.014) 2.8 (0.110) 3.1 (0.122) 0.45 (0.018) 0.35 (0.014) 0.45 (0.018) 0.35 (0.014) 0.1 (0.004) max. 2.35 (0.093) 2.6 (0.102) 0.175 (0.007) 0.098 (0.004) 1.15 (0.045) 0.9 (0.035) 1.20 (0.047) 0.7 (0.028) 0.9 (0.035) 0° to 8° 0.2 (0.008) 0.3 (0.012) 0.5 (0.020) 0.550 ref. (0.022 ref.)

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