BAS678 KEXIN | Alldatasheet
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Technical content
Features
High switching speed: max. 6ns Continuous reverse voltage: max. 80 V Repetitive peak forward current: max. 600 mA. Absolute Maximum Ratings Ta = 25 Parameter Symbol Conditions Min Max Unit repetitive peak reverse voltage V RRM 100 V Continuous reverse voltage V R 80 V Continuous forward current I F Note 1 250 mA Repetitive peak forward current I FRM 600 mA square wave; Tj =25 prior to surge; t=1 s 9 t = 100 s 3 t = 10 ms 1.7 Total power dissipation P tot Tmab = 25 ;N o t e1 250 mW Storage temperature T stg -65 +150 Junction temperature T j 150 Note 1. Device mounted on an FR4 printed-circuit board. I FSM ANon-repetitive peak forward current
2 www.kexin.com.cn High-speed diode BAS678 Electrical Characteristics Ta = 25 Parameter Symbol Conditions Min Max Unit Forward voltage V F IF = 200 mA;d.c. ; Note 1 1.0 V VR =1 0V ; 1 5 n A VR = 75 V; 100 nA VR =7 5V ;Tj = 150 50 A Diode capacitance C d f=1M H z ;VR =0 ; 2 p F when switched from IF = 400 mA to IR = 400 mA; RL =1 0 0 ;measured at IR =4 0m A ; Forward recovery voltage V fr when switched from IF =1 0m A ; tr =2 0n s ; 2 V thermal resistance from junction to tie-point Rth j-tp 330 K/W thermal resistance from junction to ambient Rth j-a 500 K/W Note 1. Tamb = 25 ; device has reached the thermal equilibrium when mounted on an FR4 printed-circuitboard. IRReverse current 6n strrReverse recovery time Marking Marking L52