BAS55 PHILIPS | Alldatasheet

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Technical content

Product specification Supersedes data of April 1996 File under Discrete Semiconductors, SC01

1996 Sep 10

book, halfpage M3D088

1996 Sep 10 2

Philips Semiconductors Product specification High-speed diode BAS55

FEATURES

  • Small plastic SMD package
  • High switching speed: max. 6 ns
  • Continuous reverse voltage: max. 60 V
  • Repetitive peak reverse voltage: max. 60 V
  • Repetitive peak forward current: max. 600 mA.

APPLICATIONS

  • High-speed switching in surface mounted circuits.

DESCRIPTION

The BAS55 is a high-speed switching diode fabricated in planar technology, and encapsulated in the small rectangular plastic SMD SOT23 package. PINNING PIN DESCRIPTION 1 anode 2 not connected 3 cathode Fig.1 Simplified outline (SOT23) and symbol. Marking code: L5p. handbook, halfpage21

3 MAM185

n.c. 1 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). Note 1. Device mounted on an FR4 printed-circuit board. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VRRM repetitive peak reverse voltage − 60 V VR continuous reverse voltage − 60 V IF continuous forward current see Fig.2; note 1 − 250 mA IFRM repetitive peak forward current − 600 mA IFSM non-repetitive peak forward current square wave; Tj=2 5°C prior to surge; see Fig.4 t=1 µs − 9A t = 100µs − 3A t = 10 ms − 1.7 A Ptot total power dissipation T amb =2 5°C; note 1 − 250 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C

1996 Sep 10 3

Philips Semiconductors Product specification High-speed diode BAS55

ELECTRICAL CHARACTERISTICS

Tj=2 5°C; unless otherwise specified. Note 1. Tamb =2 5°C; device has reached the thermal equilibrium when mounted on an FR4 printed-circuit board. THERMAL CHARACTERISTICS Note 1. Device mounted on an FR4 printed-circuit board. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VF forward voltage see Fig.3; I F = 200 mA; DC value; note 1 − 1.0 V IR reverse current see Fig.5 VR =6 0V − 100 nA VR =6 0V ; Tj= 150°C − 100 µA C d diode capacitance f = 1 MHz; V R = 0; see Fig.6 − 2.5 pF trr reverse recovery time when switched from I F = 400 mA to IR = 400 mA; RL = 100Ω ; measured at IR = 40 mA; see Fig.7 − 6n s Vfr forward recovery voltage when switched to I F = 400 mA; tr = 30 ns; see Fig.8 − 2V when switched to IF = 400 mA; tr = 100 ns; see Fig.8 − 1.5 V SYMBOL PARAMETER CONDITIONS VALUE UNIT R th j-tp thermal resistance from junction to tie-point 330 K/W R th j-a thermal resistance from junction to ambient note 1 500 K/W

1996 Sep 10 4

Philips Semiconductors Product specification High-speed diode BAS55 GRAPHICAL DATA Device mounted on an FR4 printed-circuit board. Fig.2 Maximum permissible continuous forward current as a function of ambient temperature. handbook, halfpage 0 100 200 300 200 100 MBG441 Tamb (oC) IF (mA) Fig.3 Forward current as a function of forward voltage; typical values. handbook, halfpage 300 100 200 MBH279 IF (mA) VF (V) Tj=2 5°C. Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration. Based on square wave currents. Tj=2 5°C prior to surge. handbook, full pagewidth MBG703 10 tp (µs)1 IFSM (A) 102 10−1 104102 103

1996 Sep 10 5

Philips Semiconductors Product specification High-speed diode BAS55 Fig.5 Reverse current as a function of junction temperature. (1) VR = 60 V; maximum values. (2) VR = 60 V; typical values. handbook, halfpage 2000 MBH282

100 Tj (oC)

(µA) 10−2 10−1 102 (1) (2) Fig.6 Diode capacitance as a function of reverse voltage; typical values. f = 1 MHz; Tj=2 5°C. handbook, halfpage 01 0 2 0 3 0 VR (V) 2.0 C d (pF) 1.5 0.5 1.0 MBH283

1996 Sep 10 6

Philips Semiconductors Product specification High-speed diode BAS55 Fig.7 Reverse recovery voltage test circuit and waveforms. handbook, full pagewidth trr (1) IF t output signal tr t tp 10% 90%V R input signal V = V I x RRF S R = 50S Ω IF D.U.T. R = 50i Ω SAMPLING OSCILLOSCOPE MGA881 (1) IR =4 0m A . Fig.8 Forward recovery voltage test circuit and waveforms. tr t tp 10% 90% I input signal R = 50S Ω I R = 50i Ω OSCILLOSCOPE Ω1 k Ω450 D.U.T. MGA882 V fr t output signal V Input signal: forward pulse duration tp = 300 ns; duty factorδ = 0.01.

1996 Sep 10 7

Philips Semiconductors Product specification High-speed diode BAS55 PACKAGE OUTLINE DEFINITIONS LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification. Fig.9 SOT23. Dimensions in mm. handbook, full pagewidth MBC846 max o max o max o 1.1 max 0.55 0.45 0.150 0.0900.1 max M0.1 AB0.48 0.38 TOP VIEW 1.4 1.2 2.5 max 3.0 2.8 M0.2 AA B 0.95 1.9