BAS55 KEXIN | Alldatasheet
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Technical content
Features
High switching speed: max. 6ns Continuous reverse voltage: max. 60 V Repetitive peak forward current: max. 600 mA. Absolute Maximum Ratings Ta = 25 Parameter Symbol Conditions Min Max Unit Repetitive peak reverse voltage V RRM 60 V Continuous reverse voltage V R 60 V Continuous forward current I F Note 1 250 mA Repetitive peak forward current I FRM 600 mA square wave; Tj =25 prior to surge; t=1 s 9 t=1 0 0 s 3 t = 100 ms 1.7 Total power dissipation P tot Tmab = 25 ;N o t e1 250 mW Storage temperature T stg -65 +150 Junction temperature T j 150 Note 1. Device mounted on an FR4 printed-circuit board. I FSM ANon-repetitive peak forward current
2 www.kexin.com.cn High-speed diode BAS55 Electrical Characteristics Ta = 25 Parameter Symbol Conditions Max Unit Forward voltage V F IF = 200 mA;DC value; Note 1 1.0 V VR = 60 V; 100 nA VR =6 0V ;Tj = 150 100 A Diode capacitance C d f=1M H z ;VR =0 ; 2 . 5 p F when switched from IF = 400 mA to IR = 400 mA; RL = 100 ;measured at IR =4 0m A ; when switched to IF = 400 mA;tr =3 0n s ; 2 when switched to IF = 400 mA;tr = 100 ns; 1.5 Note 1. Tamb = 25 ; device has reached the thermal equilibrium when mounted on an FR4 printed-circuit board. Reverse current I R trrReverse recovery time 6n s Forward recovery voltage V fr V Marking Marking L5p