BAS521WT_11 SEMTECH_ELEC | Alldatasheet

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Technical content

Dated : 13/07/2007 SEMTECH ELECTRONICS LTD. Subsidiary of Sino-Tech International (BVI) Limited BAS521WT High Voltage Switching Diode

Applications

  • high speed switching
  • high voltage switching Absolute Maximum Ratings (T a = 25 OC) Parameter Symbol Value Unit Repetitive Peak Reverse Voltage VRRM 300 V Reverse Voltage VR 300 V Continuous Forward Current IF 225 mA Repetitive Peak Forward Current IFRM 625 mA Non-Repetitive Peak Forward Current (1 µs) IFSM 4 A Power Dissipation Ptot 250 mW Junction Temperature TJ 150 OC Storage Temperature Range Tstg - 65 to + 150 OC Characteristics at Ta = 25 OC Parameter Symbol Min. Max. Unit Forward Voltage at IF = 100 mA VF - 1.1 V Reverse Breakdown Voltage at IR = 100 µA V(BR)R 300 - V Reverse Current at VR = 250 V IR - 150 nA Reverse Recovery Time at IF = IR = 30 mA, RL = 100 Ω, irr = 0.1 IR trr - 50 ns Total Capacitance at VR = 0 V, f = 1 MHz CT - 5 pF Anode2 Top View Marking Code: " a" Simplified outline SOD-523 and symbol a PINNING PIN Cathode

DESCRIPTION

Dated : 13/07/2007 SEMTECH ELECTRONICS LTD. Subsidiary of Sino-Tech International (BVI) Limited BAS521WT SEMTECH

Dated : 13/07/2007 SEMTECH ELECTRONICS LTD. Subsidiary of Sino-Tech International (BVI) Limited BAS521WT PACKAGE OUTLINE Plastic surface mounted package; 2 leads SOD-523 mm A E b A C UNIT p D A b CDEH V H ALL ROUND E Ep 0.70 0.60 0.4 0.3 0.135 0.100 1.25 1.15 0.85 0.75 1.7 1.5 0.1 5 O SEMTECH