BAS521 LUGUANG | Alldatasheet
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Technical content
High voltage switching diode BAS521
FEATURES
- High switching speed: max. 50 ns
- High continuous reverse voltage: 300 V
- Repetitive peak forward current: 625 mA
- Ultra small plastic SMD package.
APPLICATIONS
- High speed switching
- High voltage switching.
DESCRIPTION
The BAS521 is a high-voltage switching diode fabricated in planar technology and encapsulated in an ultra small SOD523 (SC-79) plastic SMD package. PINNING PIN DESCRIPTION 1 cathode 2 anode LIMITING VALUES In accordance with the absolute Maximum Rating System (IEC 60134). Note 1. Ts is the temperature at the soldering point of the cathode tab. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VR continuous reverse voltage − 300 V VRRM repetitive peak reverse voltage − 300 V IF continuous forward current T s ≤ 90 °C; note 1 − 250 mA IFRM repetitive peak forward current tp = 1 ms;δ = 0.25 − 1A IFSM non-repetitive peak forward current tp =1µ s; square wave; Tj=2 5°C prior to surge − 4.5 A Ptot total power dissipation Ts ≤ 90 °C; note 1 − 500 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C http://www.luguang.cn Email:lge@luguang.cn Dimensions in inches and (millimeters) SOD-523
ELECTRICAL CHARACTERISTICS
Tamb =2 5°C unless otherwise specified. Note 1. Pulse test: tp = 300µs;δ = 0.02. THERMAL CHARACTERISTICS Notes 1. Soldering point of the cathode tab. 2. Refer to SOD523 (SC-79) standard mounting conditions. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V BR breakdown voltage I R = 100µA 300 340 − V VF forward voltage I F = 100 mA; note 1 − 0.95 1.1 V IR reverse current V R = 250 V − 30 150 nA VR = 250 V; Ta = 150°C − 40 100 µA trr reverse recovery time when switched from IF = 30 mA to IR = 30 mA; RL = 100Ω; measured at IR =3m A − 16 50 ns C d diode capacitance V R = 0 V; f = 1 MHz − 0.4 5 pF SYMBOL PARAMETER CONDITIONS VALUE UNIT R th j-s thermal resistance from junction to solder point note 1 120 K/W R th j-a thermal resistance from junction to ambient note 2 500 K/W http://www.luguang.cn Email:lge@luguang.cn BAS521
handbook, halfpage 0 0.5 1 (2) 1.5 IF (mA) VF (V) 500 400 300 200 100 MHC618 (1) (3) Fig.2 Forward current as a function of forward voltage; typical values. (1) Tamb = 150°C. (2) Tamb =7 5°C. (3) Tamb =25 °C. handbook, halfpage 2000 40 80 120 IR (mA) 160 Tj (°C) 102 10-1 10-2 MHC619 Fig.3 Reverse current as a function of junction temperature. VR =V Rmax ; typical values. handbook, halfpage 300 200 100 50 100 200 Tamb (°C) 150 IF (mA) MHC620 Fig.4 Maximum permissible continuous forward current as a function of ambient temperature. handbook, halfpage 01 0 2 0 4 0 0.42 0.3 0.34 0.38 C d (pF) VR (V) MHC621 Fig.5 Diode capacitance as a function of reverse voltage; typical values. http://www.luguang.cn Email:lge@luguang.cn BAS521
handbook, full pagewidth MBG703 10 tp (µs)1 IFSM (A) 102 10−1 104102 103 Fig.6 Maximum permissible non-repetitive peak forward current as a function of pulse duration. Based on square wave currents. Tj=2 5°C prior to surge. http://www.luguang.cn Email:lge@luguang.cn BAS521