BAS516 SKTECHNOLGY | Alldatasheet
Document overview
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Technical content
High speed Switching Diode
FEATURES
z Extremely small surface mounting type. z Small package. z High speed and high reliability
APPLICATIONS
z High speed switching. MAXIMUM RATING @ Ta=25℃ unless otherwise specified Parameter Symbol Limits Unit Peak reverse voltage V RM 90 V DC Reverse voltage V R 80 V Continuous forward current I F 225 mA Surge current I FSM 0.5 A Total power dissipation P tot 150 mW Junction temperature T j 125 ℃ Storage temperature T stg -55-125 ℃
ELECTRICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified Parameter Symbol Min. Typ. Max. Unit Conditions Forward voltage V F
1.2 V I
F =100mA Reverse current I R 20 μA V R =80V Diode capacitance C d 0.72 3.0 pF V R =0.5V,f=1MHz Reverse recovery time t rr 4 ns V R =6V,I F =10mA,R L =100Ω BAS516 1 of 3 REV.08
@ Ta=25℃ unless otherwise specified BAS516 2 of 3 REV.08
Plastic surface mounted package SOD-523 SOD-523 Dim Min Max A 1.1 1..3 B 0.7 0.9 C 0.5 0.7 D 0.25 0.35 E 0.15 0.25 J 0.1 Typical K 1.5 1.7 All Dimensions in mm SOLDERING FOOTPRINT U n i t mm BAS516 3 of 3 REV.08