BAS516 PHILIPS | Alldatasheet
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Technical content
Product specification 1998 Aug 31 DISCRETE SEMICONDUCTORS BAS516 High-speed diode M3D319
1998 Aug 31 2
Philips Semiconductors Product specification High-speed diode BAS516
FEATURES
- Ultra small plastic SMD package
- High switching speed: max. 4 ns
- Continuous reverse voltage: max. 75 V
- Repetitive peak reverse voltage: max. 85 V
- Repetitive peak forward current: max. 500 mA.
APPLICATIONS
- High-speed switching in e.g. surface mounted circuits.
DESCRIPTION
The BAS516 is a high-speed switching diode fabricated in planar technology, and encapsulated in the SOD523 (SC79) SMD plastic package. PINNING PIN DESCRIPTION 1 cathode 2 anode Fig.1 Simplified outline (SOD523) and symbol. Marking code: 6. handbook, halfpage12 /#01/#03 Top view MAM408 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). Note 1. Ts is the temperature at the soldering point of the cathode tab. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VRRM repetitive peak reverse voltage − 85 V VR continuous reverse voltage − 75 V IF continuous forward current T s =9 0°C; note 1; see Fig.2 − 250 mA IFRM repetitive peak forward current − 500 mA IFSM non-repetitive peak forward current square wave; Tj=2 5°C prior to surge; see Fig.4 t=1 µs − 4A t=1m s − 1A t=1s − 0.5 A Ptot total power dissipation T s =9 0°C; note 1 − 500 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C
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Philips Semiconductors Product specification High-speed diode BAS516
ELECTRICAL CHARACTERISTICS
Tj=2 5°C unless otherwise specified. THERMAL CHARACTERISTICS Note 1. Soldering point of the cathode tab. SYMBOL PARAMETER CONDITIONS MAX. UNIT VF forward voltage see Fig.3 IF = 1 mA 715 mV IF = 10 mA 855 mV IF =5 0m A 1 V IF = 150 mA 1.25 V IR reverse current see Fig.5 VR = 25 V 30 nA VR =7 5V 1 µA VR = 25 V; Tj= 150°C3 0 µA VR = 75 V; Tj= 150°C; 50 µA C d diode capacitance f = 1 MHz; V R = 0; see Fig.6 1 pF trr reverse recovery time when switched from IF = 10 mA to IR = 10 mA; R L = 100Ω ; measured at IR = 1 mA; see Fig.7 4n s Vfr forward recovery voltage when switched from IF = 10 mA; tr = 20 ns; see Fig.8 1.75 V SYMBOL PARAMETER CONDITIONS VALUE UNIT R th j-s thermal resistance from junction to soldering point note 1 120 K/W
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Philips Semiconductors Product specification High-speed diode BAS516 GRAPHICAL DATA Fig.2 Maximum permissible continuous forward current as a function of soldering point temperature. handbook, halfpage 0 100 150 50 200 400 500 300 200 100 MGM762 Ts (oC) IF (mA) (1) Tj= 150°C; typical values. (2) Tj=2 5°C; typical values. (3) Tj=2 5°C; maximum values. Fig.3 Forward current as a function of forward voltage. handbook, halfpage 300 IF (mA) 100 200 MBG382
1 VF (V)
(1) (3) (2) Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration. Based on square wave currents; Tj=2 5°C prior to surge. handbook, full pagewidth MBG704 10 tp (µs)1 IFSM (A) 102 10−1 104102 103
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Philips Semiconductors Product specification High-speed diode BAS516 Fig.5 Reverse current as a function of junction temperature. 105 104 2000 MGA884
100 T ( C)j o
(nA) 103 102 75 V 25 V typ max V = 75 VR typ Fig.6 Diode capacitance as a function of reverse voltage; typical values. f = 1 MHz; Tj=2 5°C. handbook, halfpage 0.6 0.4 0.2 48 1 6 VR (V) C d (pF) MBK881
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Philips Semiconductors Product specification High-speed diode BAS516 Fig.7 Reverse recovery voltage test circuit and waveforms. (1) IR = 1 mA. Input signal: reverse pulse rise time tr = 0.6 ns; reverse voltage pulse duration tp = 100 ns; duty factorδ = 0.05; Oscilloscope: rise time tr = 0.35 ns. handbook, full pagewidth trr (1) IF t output signal tr t tp 10% 90%V R input signal V = V I x RRF S R = 50S Ω IF D.U.T. R = 50i Ω SAMPLING OSCILLOSCOPE MGA881 Fig.8 Forward recovery voltage test circuit and waveforms. Input signal: forward pulse rise time tr = 20 ns; forward current pulse duration tp ≥ 100 ns; duty factorδ≤ 0.005. tr t tp 10% 90% I input signal R = 50S Ω I R = 50i Ω OSCILLOSCOPE Ω1 k Ω450 D.U.T. MGA882 V fr t output signal V
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Philips Semiconductors Product specification High-speed diode BAS516 PACKAGE OUTLINE REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC EIAJ SOD523 SC-79 98-11-25 Plastic surface mounted package; 2 leads SOD523 0 0.5 1 mm scale D H E E bp A c v M A A UNIT b p cD E v mm 0.35 0.25 0.2 0.1 0.150.9 0.7 1.3 1.1 A 0.7 0.5 H E 1.7 1.5 DIMENSIONS (mm are the original dimensions) Note 1. The marking bar indicates the cathode. (1)
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Philips Semiconductors Product specification High-speed diode BAS516 DEFINITIONS LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
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Philips Semiconductors Product specification High-speed diode BAS516 NOTES
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Philips Semiconductors Product specification High-speed diode BAS516 NOTES
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Philips Semiconductors Product specification High-speed diode BAS516 NOTES
Internet: http://www.semiconductors.philips.com Philips Semiconductors – a worldwide company © Philips Electronics N.V. 1998 SCA60 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Middle East: see Italy Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB, Tel. +31 40 27 82785, Fax. +31 40 27 88399 New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND, Tel. +64 9 849 4160, Fax. +64 9 849 7811 Norway: Box 1, Manglerud 0612, OSLO, Tel. +47 22 74 8000, Fax. +47 22 74 8341 Pakistan: see Singapore Philippines: Philips Semiconductors Philippines Inc., 106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI, Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474 Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA, Tel. +48 22 612 2831, Fax. +48 22 612 2327 Portugal: see Spain Romania: see Italy Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW, Tel. +7 095 755 6918, Fax. +7 095 755 6919 Singapore: Lorong 1, Toa Payoh, SINGAPORE 319762, Tel. +65 350 2538, Fax. +65 251 6500 Slovakia: see Austria Slovenia: see Italy South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale, 2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000, Tel. +27 11 470 5911, Fax. +27 11 470 5494 South America: Al. Vicente Pinzon, 173, 6th floor, 04547-130 SÃO PAULO, SP, Brazil, Tel. +55 11 821 2333, Fax. +55 11 821 2382 Spain: Balmes 22, 08007 BARCELONA, Tel. +34 93 301 6312, Fax. +34 93 301 4107 Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM, Tel. +46 8 5985 2000, Fax. +46 8 5985 2745 Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH, Tel. +41 1 488 2741 Fax. +41 1 488 3263 Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1, TAIPEI, Taiwan Tel. +886 2 2134 2865, Fax. +886 2 2134 2874 Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd., 209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260, Tel. +66 2 745 4090, Fax. +66 2 398 0793 Turkey: Talatpasa Cad. No. 5, 80640 GÜLTEPE/ISTANBUL, Tel. +90 212 279 2770, Fax. +90 212 282 6707 Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7, 252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461 United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes, MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421 United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409, Tel. +1 800 234 7381 Uruguay: see South America Vietnam: see Singapore Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD, Tel. +381 11 625 344, Fax.+381 11 635 777 For all other countries apply to: Philips Semiconductors, International Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria:Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 160 1010, Fax. +43 160 101 1210 Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6, 220050 MINSK, Tel. +375 172 200 733, Fax. +375 172 200 773 Belgium: see The Netherlands Brazil:see South America Bulgaria:Philips Bulgaria Ltd., Energoproject, 15th floor, 51 James Bourchier Blvd., 1407 SOFIA, Tel. +359 2 689 211, Fax. +359 2 689 102 Canada: PHILIPS SEMICONDUCTORS/COMPONENTS, Tel. +1 800 234 7381 China/Hong Kong: 501 Hong Kong Industrial Technology Centre,
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