BAS511 KEXIN | Alldatasheet
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Technical content
www.kexin.com.cn 1 Diod es Switching Diodes BAS511 (KAS511) ■ Features
- Silicon epitaxial planar diode
- High switching speed: trr≤4ns
- Low forward drop voltage and low leakage current
- “Green” device and RoHS compliant device
- Available in full lead (Pb)-free device Unit: mm SOD-323 1.7+0.1 -0.1 2.6+0.1 -0.1 1.3+0.1 -0.1 0.1+0.05 -0.02 0.475 0.375 0.3+0.05 -0.05 0.85+0.05 -0.05 1.0max ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Repetitive Peak Reverse Voltage VRM 85 Continuous Reverse Voltage VR 80 Average Forward Rectified Current IO 100 Forward Current IF 100 Peak Forward Surge Current IFM 300 Non-repetitive peak forward surge current(t=10ms) IFSM 2 A Power Dissipation Pd 150 mW Thermal Resistance Junction to Ambient RθJA 830 ℃/W Junction Temperature TJ 150 Storage Temperature range Tstg -55 to 150 V mA ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Reverse breakdown voltage VR IR= 100 uA 85 VF1 IF= 1 mA 0.6 VF2 IF= 10 mA 0.7 VF3 IF= 100 mA 0.9 1.2 Reverse voltage leakage current IR1 VR= 80 V (Note.2) 0.5 uA Junction capacitance Cj VR= 0 V, f= 1 MHz 4 pF Reverse recovery time trr IF=10mA 4 ns Forward voltage (Note.1) V Note.1: Pulse test: tP≤380us, Duty cycle≤2% Note.2: Pulse test: tP≤5ms, Duty cycle≤2% ■ Marking Marking S1*
www.kexin.com.cn2 Diod es Switching Diodes BAS511 (KAS511) ■ Typical Characterisitics