BAS40 TSC | Alldatasheet

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Technical content

Features

—Green compound (Halogen free) with suffix "G" on packing code and prefix "G" on date code —High temperature soldering guaranteed: 260°C/10s —Terminal: Matte tin plated, lead free., solderable per MIL-STD-202, Method 208 guaranteed —Metal-on-silicon Shcottky Barrier —Weight : 0.008gram (approximately) G B C Unit (mm) D E F Forward Voltage V F Rating at 25°C ambient temperature unless otherwise specified. Power Dissipation Units - 0.50 Non-Repetitive Peak Forward Surge Current (Note 1) V Maximum Ratings and Electrical Characteristics Value V V °C/W 0.6 A BAS40 BAS40-06BAS40-05BAS40-04 B A C D G F E Version : C09

200mW, Low VF, SMD Schottky Barrier Diode Small Signal Diode Rating and Sharacteristic Curves ( BAS40 / -04 / -05 / -06 ) Version : C09 FIG.4- TYPICAL REVERSE CHARACTERISTICS FIG.1- POWER DERATING CURVE P , POWER DISSIPATION (mW) D 0 25 50 75 100 125 200 100 T , AMBIENT TEMPERATURE ( C)A FIG.6- TYPICAL TRANSIENT THERMAL CHARACTERISTICS TRANSIENT THERMAL IMPEDANCE. ( C/W) O 10.01 0.1 10 100 100 0.1 PULSE DURATION. (sec) FIG.2- MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT PER LEG PEAK FORWARD SURGE CURRENT. (mA) 1 2 5 10 20 10050 600 300 NUMBER OF CYCLES AT 60Hz 8.3ms Single Half Sine Wave (JEDEC Method) FIG.3- TYPICAL FORWARD CHARACTERISTICS 00 . 2 1 . 2 INSTANTANEOUS FORWARD CURRENT (mA) T , INSTANTANEOUS FORWARD VOLTAGE (mV)j 0.1 0.01 0.001 0.0001 0.4 0.6 0.8 1.0 FIG.5- TYPICAL TOTAL CAPACITANCE VS REVERSE VOLTAGE 4.0 2.0 0 0 5 10 15 20 REVERSE VOLTAGE JUNCTION CAPACITANCE (pF) f = 1.0MHz 10 20 30 40 10000 1000 100 0.1 V , REVERSE VOLTAGE. (V)R I,R INSTANTANEOUS REVERSE CURRENT. ( nnA) T = -40 CA T= 0 CA T = 25 CA T = 125 CA T = 70 CA T = -40 CA T = 70 CA T= 0 CA T = 25 CA T = 125 CA