BAS40 AITSEMI | Alldatasheet
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AiT Semiconductor Inc. www.ait-ic.com BAS40 SCHOTTKY DIODES 120mA, 40V REV1.1 - JAN 2014 RELEASED, JUN 2021 UPDATED - - 1 - DESCRIPTION FEATURES 120mA Planar Schottky barrier diodes with an integrated guard ring for stress protection. Single diodes and double diodes with different pinning are available. The BAS40 is available in SOT-23 package ⚫ Low Turn-on Voltage ⚫ Fast Switching ⚫ Low forward current ⚫ High breakdown voltage ⚫ Guard ring protected ⚫ Low diode capacitance. ⚫ Available in SOT-23 package
ORDERING INFORMATION
Note SPQ: 3,000pcs/Reel AiT provides all RoHS Compliant Products
APPLICATIONS
⚫ Ultra high-speed switching ⚫ Voltage clamping ⚫ Protection circuits. ⚫ Blocking diodes. PIN DESCRIPTION BAS40-05 double diode. BAS40-06 double diode. BAS40 single diode. BAS40-04 double diode.
AiT Semiconductor Inc. www.ait-ic.com BAS40 SCHOTTKY DIODES 120mA, 40V REV1.1 - JAN 2014 RELEASED, JUN 2021 UPDATED - - 2 - ABSOLUTE MAXIMUM RATINGS VR, Continuous Reverse Voltage 40V IF, Continuous Forward Current 120mA IFSM, Repetitive Peak Forward Surge Current (tp≦1s;δ≦0.5) 120mA IFSM, Non-repetitive Peak Forward Current (tp<10ms) 200mA TSTG, Storage Temperature -65~+150°C TJ, Junction Temperature 150°C TAMB, Operating Ambient Temperature -65~+150°C Stresses above may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated in the Electrical Characteristics are not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
ELECTRICAL CHARACTERISTICS
TA = 25°C Parameter Symbol Conditions Max. Unit Forward Voltage (Fig.1) VF IF=1mA IF=10mA IF=40mA 400 560 mV mV V Reverse Current (Fig.2)NOTE1 IR VR=30V VR=40V μA μA Diode Capacitance (Fig.4) Cd f=1MHz;VR=0 5 pF NOTE1: Pulse test:tp=300μs;δ=0.02. THERMAL CHARACTERISTICS Parameter Symbol Value Unit Thermal Resistance from Junction to Ambient Rth j-a 500 k/w
AiT Semiconductor Inc. www.ait-ic.com BAS40 SCHOTTKY DIODES 120mA, 40V REV1.1 - JAN 2014 RELEASED, JUN 2021 UPDATED - - 4 -
PACKAGE INFORMATION
Dimension in SOT-23 Package (Unit: mm) DIM MILLIMETERS INCHES MIN MAX MIN MAX A 2.800 3.040 0.1102 0.1197 B 1.200 1.400 0.0472 0.0551 C 0.890 1.110 0.0350 0.0440 D 0.370 0.500 0.0150 0.0200 G 1.780 2.040 0.0701 0.0807 H 0.013 0.100 0.0005 0.0040 J 0.085 0.177 0.0034 0.0070 K 0.350 0.690 0.0140 0.0285 L 0.890 1.020 0.0350 0.0401 S 2.100 2.640 0.0830 0.1039 V 0.450 0.600 0.0177 0.0236
AiT Semiconductor Inc. www.ait-ic.com BAS40 SCHOTTKY DIODES 120mA, 40V REV1.1 - JAN 2014 RELEASED, JUN 2021 UPDATED - - 5 - IMPORTANT NOTICE AiT Semiconductor Inc. (AiT) reserves the rig ht to make changes to any its product, specifications, to discontinue any integrated circuit product or service without notice, and ad vises its customers to obtain the latest version of relevant information to verify, before placing orders, that the inform ation being relied on is current. AiT Semiconductor Inc. 's integrated cir cuit products are not designed, intended, authorized, or war ranted to be suitable for use in life support applications, devices or systems or other critical applications. Use of AiT products in such applications is understood to be fully at the risk of the customer. As used herein may involve potential risks of dea th, personal injury, or servere property, or environmental damage. In order to minimize risks associated with the customer 's applications, the customer should provide adequate design and operating safeguards. AiT Semiconductor Inc . assumes to no liability to customer product desi gn or application support. AiT warrants the performance of its products of the specifications applicable at the time of sale.