BAS40_14 TSC | Alldatasheet

Document overview

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Technical content

  • Metal-on-silicon schottky barrier - Surface device type mounting - Moisture sensitivity level 1 - Matte Tin(Sn) lead finish with Nickel(Ni) underplat e - Packing code with suffix "G" means green compound (halogen-free) - Case: SOT- 23, molded plastic - Terminal: Matte tin plated, lead free, solderable per MIL-STD-202, Method 208 guaranteed - High temperature soldering guaranteed: 260 oC/10s - Weight: 0.008g (approximately) SYMBOL UNIT PD mW VRRM V VR V IFRM mA IO mA IFSM A RθJA oC/W TJ , TSTG oC SYMBOL UNIT Reverse Breakdown Voltage V(BR) V IR μA Junction Capacitance CJ pF Reverse Recovery Time trr ns Notes : 1. Test Condition : 8.3ms single half sine-wave superimposed on rated load Notes : 2. Valid provided that electrodes are kept at ambient temperature Document Number: DS_S1412006 Version: F14 Taiwan Semiconductor Small Signal Product Low VF SMD Schottky Barrier Diode

FEATURES

MAXIMUM RATINGS AND ELECTRICAL CHARACTERSTICS (TA=25℃ unless otherwise noted) SOT-23 PARAMETER VALUE 357 -65 to +125 Non-Repetitive Peak Forward Surge Current PARAMETER MIN MAX 0.50 IR=10μA IF=1mA IF=10mA IF=IR=10mA, RL=100Ω, IRR=1mA Reverse Leakage Current -0 . 2 VFForward Voltage -5 . 0 -5 . 0 V -0 . 3 8 -1 . 0 0I F=40mA VR=30V VR=1V, f=1.0MHz 200 200 200 0.6 Power Dissipation Repetitive Peak Reverse Voltage Reverse Voltage Repetitive Peak Forward Current Mean Forward Current Junction and Storage Temperature Range (Note 1) (Note 2)Thermal Resistance (Junction to Ambient)

(TA=25℃ unless otherwise noted) Document Number: DS_S1412006 Small Signal Product Taiwan Semiconductor RATINGS AND CHARACTERISTICS CURVES Version: F14 100 200 0 25 50 75 100 125 PD - Power Dissipation (mW) TA - Ambient Temperature (oC) Fig.1 Power Derating Curve 300 600 1 10 100 Peak Forward Surge Current (mA) Numbers of Cycles at 60 Hz Fig. 2 Maximum Non-Repetitve Peak Forward Surge Current Per Leg 8.3 ms single half sine wave 0.0001 0.001 0.01 0.1 Instantaneous Forward Current (mA) VF, Instantaneous Forward Voltage (mV) Fig. 3 Typical Forward Characteristics TA= -40 °C TA= 0 °C TA= 25 °C TA=70 °C TA= 125 °C 0.1 100 1000 10000 0 1 02 03 04 0 IR - Instantaneous Reverse Current (mA) VR - Reverse Voltage (V) Fig. 4 Typical Reverse Characteristics TA=125 °C TA=70 °C TA=25 °C TA=0 °C TA= -40 °C 0 5 10 15 20 Junction Capacitance (pF) Reverse Voltage (V) Fig. 5 Typical Total Capacitance VS. Reverse Voltage f=1.0MHz 0.1 100 Transient Thermal Impedance (oC/W) Pulse Duration (sec) Fig. 6 Typical Transient Thermal

ORDERING INFORMATION

PART NO. BAS40 BAS40-04 BAS40-05 BAS40-06 Note 1: Part No. Suffix „-xx “ would be used for special requirement PART NO. Document Number: DS_S1412006 BAS40 RF G Multiple manufacture source Green compound -D0 RF G Define manufacture source Green compound RFBAS40 BAS40 RF BAS40 EXAMPLE PREFERRED P/N PART NO. SUFFIX Taiwan Semiconductor Small Signal Product PACKING CODE PACKAGE PACKING MARKING PART NO. SUFFIX (Note 1) PACKING CODE SUFFIX G SOT-23 3K / 7" ReelRF-xx Version: F14 PACKING CODE PACKING CODE SUFFIX BAS40 RFG

DESCRIPTION

PACKAGE OUTLINE DIMENSIONS Min Max Min Max A 2.70 3.10 0.106 0.122 B 1.10 1.50 0.043 0.059 C 0.30 0.51 0.012 0.020 D 1.78 2.04 0.070 0.080 E 2.10 2.64 0.083 0.104 F 0.89 1.30 0.035 0.051 G H SUGGEST PAD LAYOUT Z X Y C E PIN CONFIGURATION Document Number: DS_S1412006 Version: F14 DIM.

0.55 REF

0.04 0.07

0.022 REF

Unit(mm) Unit(inch) 0.04 0.11 0.03 2.8 0.7 0.9 1.9 1.0 Taiwan Semiconductor 0.10 REF 0.004 REF Unit(mm) Typ. Unit(inch) Typ. Small Signal Product DIM.

assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied,to any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or seling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. Document Number: DS_S1412006 Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, Version: F14