BAS40-04

BAS40 PHILIPS | Alldatasheet

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Technical content

Product specification Supersedes data of 1997 Oct 24

1999 Apr 28

Schottky barrier (double) diodes age M3D088 M3D071

1999 Apr 28 2

Philips Semiconductors Product specification Schottky barrier (double) diodes BAS40 series

FEATURES

• Low forward voltage
• Guard ring protected
• Small plastic SMD package
• Low diode capacitance.

APPLICATIONS

• Ultra high-speed switching
• Voltage clamping
• Protection circuits
• Blocking diodes.

DESCRIPTION

Planar Schottky barrier diodes with an integrated guard ring for stress protection. Single diodes and double diodes with different pinning are available. The diodes BAS40, BAS40-04, BAS40-05 and BAS40-06 are encapsulated in a SOT23 small plastic SMD package. The BAS40-07 is encapsulated in a SOT143B small plastic SMD package PINNING SOT23 (see Fig.1a) PIN (see Fig.1b) BAS40-04 (see Fig.1c) BAS40-05 (see Fig.1d) BAS40-06 (see Fig.1e) 1 a1 a1 k1 2 n.c. k 2 a2 k2 3k 1 k1,a2 k1,k2 a1,a2 Fig.1 Simplified outline (SOT23) and symbols. d. BAS40-05. e. BAS40-06.b. BAS40 single diode. a. Simplified outline SOT23. c. BAS40-04 handbook, 2 columns MGC482Top view handbook, 2 columns n.c. MGC483 handbook, 2 columns MGC484 handbook, 2 columns MGC485 handbook, 2 columns MGC486 Fig.2 Simplified outline (SOT143B) BAS40-07 and symbol. handbook, halfpage43 Top view MAM194 MARKING Note 1. ∗ = p: Made in Hong Kong. ∗ = t: Made in Malaysia. PINNING SOT143B (see Fig.2) TYPE NUMBER MARKING CODE (1) BAS40 43 ∗ BAS40-04 44 ∗ BAS40-05 45 ∗ BAS40-06 46 ∗ BAS40-07 47p PIN DESCRIPTION BAS40-07 1k 1 2k 2 3a 2 4a 1

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Philips Semiconductors Product specification Schottky barrier (double) diodes BAS40 series LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).

ELECTRICAL CHARACTERISTICS

Tamb =2 5°C unless otherwise specified. Note 1. Pulse test: tp = 300µs;δ = 0.02. THERMAL CHARACTERISTICS Note 1. Refer to SOT23 or SOT143B standard mounting conditions. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per diode VR continuous reverse voltage − 40 V IF continuous forward current − 120 mA IFRM repetitive peak forward current t p ≤ 1s ;δ≤ 0.5 − 120 mA IFSM non-repetitive peak forward current tp < 10 ms − 200 mA Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C SYMBOL PARAMETER CONDITIONS MAX. UNIT Per diode VF forward voltage see Fig.3 IF =1m A 380 mV IF =1 0m A 500 mV IF =4 0m A 1V IR reverse current V R = 30 V; note 1; see Fig.4 1 µA VR = 40 V; note 1; see Fig.4 10 µA C d diode capacitance f = 1 MHz; V R = 0 ; see Fig.6 5p F SYMBOL PARAMETER CONDITIONS VALUE UNIT R th j-a thermal resistance from junction to ambient note 1 500 K/W

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Philips Semiconductors Product specification Schottky barrier (double) diodes BAS40 series GRAPHICAL DATA (1) Tamb = 150°C. (2) Tamb =8 5°C. (3) Tamb =2 5°C. (4) Tamb = −40 °C. Fig.3 Forward current as a function of forward voltage; typical values. handbook, halfpage102 10 2 MLC361 - 1 V (V) 10 1 IF (mA) F (1) (2) (3) (4) (1) Tamb = 150°C. (2) Tamb =8 5°C. (3) Tamb =2 5°C. Fig.4 Reverse current as a function of reverse voltage; typical values. handbook, halfpage103 102 10−1 10−2 MLC362 2010 40 30 VR (V) IR (µA) (1) (2) (3) f = 10 kHz. Fig.5 Differential forward resistance as a function of forward current; typical values. handbook, halfpage MLC364 11 0 1 0 21 10 3 102 10 1 rdiff (Ω ) I (mA)F Fig.6 Diode capacitance as a function of reverse voltage; typical values. f = 1 MHz Tamb =2 5°C. handbook, halfpage 01 0 2 0 4 0 30 MLC363 VR (V) C d (pF)

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Philips Semiconductors Product specification Schottky barrier (double) diodes BAS40 series PACKAGE OUTLINES UNIT A 1 max. bp cD E e1 H E Lp Qw v REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE 97-02-28 IEC JEDEC EIAJ mm 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 0.95 e 1.9 2.5 2.1 0.55 0.45 0.10.2 DIMENSIONS (mm are the original dimensions) 0.45 0.15 SOT23 bp D e A Lp Q detail X H E E w M v M A B AB 0 1 2 mm scale A 1.1 0.9 c X Plastic surface mounted package; 3 leads SOT23

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Philips Semiconductors Product specification Schottky barrier (double) diodes BAS40 series UNIT A REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC EIAJ mm 1.1 0.9 A 1 max 0.1 0.88 0.78 c 0.15 0.09 D 3.0 2.8 E 1.4 1.2 H E ywvQ 2.5 2.1 0.45 0.15 0.55 0.45 e 1.9 1.7 Lp 0.1 0.10.2 bp 0.48 0.38 DIMENSIONS (mm are the original dimensions) SOT143B 97-02-28 0 1 2 mm scale Plastic surface mounted package; 4 leads SOT143B D H E E AB v M A X A Lp Q detail X c y w M e B bp

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Philips Semiconductors Product specification Schottky barrier (double) diodes BAS40 series DEFINITIONS LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

Internet: http://www.semiconductors.philips.com Philips Semiconductors – a worldwide company © Philips Electronics N.V. 1999 SCA63 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB, Tel. +31 40 27 82785, Fax. +31 40 27 88399 New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND, Tel. +64 9 849 4160, Fax. +64 9 849 7811 Norway: Box 1, Manglerud 0612, OSLO, Tel. +47 22 74 8000, Fax. +47 22 74 8341 Pakistan: see Singapore Philippines: Philips Semiconductors Philippines Inc., 106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI, Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474 Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA, Tel. +48 22 612 2831, Fax. +48 22 612 2327 Portugal: see Spain Romania: see Italy Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW, Tel. +7 095 755 6918, Fax. +7 095 755 6919 Singapore: Lorong 1, Toa Payoh, SINGAPORE 319762, Tel. +65 350 2538, Fax. +65 251 6500 Slovakia: see Austria Slovenia: see Italy South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale, 2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000, Tel. +27 11 470 5911, Fax. +27 11 470 5494 South America: Al. Vicente Pinzon, 173, 6th floor, 04547-130 SÃO PAULO, SP, Brazil, Tel. +55 11 821 2333, Fax. +55 11 821 2382 Spain: Balmes 22, 08007 BARCELONA, Tel. +34 93 301 6312, Fax. +34 93 301 4107 Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM, Tel. +46 8 5985 2000, Fax. +46 8 5985 2745 Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH, Tel. +41 1 488 2741 Fax. +41 1 488 3263 Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1, TAIPEI, Taiwan Tel. +886 2 2134 2886, Fax. +886 2 2134 2874 Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd., 209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260, Tel. +66 2 745 4090, Fax. +66 2 398 0793 Turkey: Talatpasa Cad. No. 5, 80640 GÜLTEPE/ISTANBUL, Tel. +90 212 279 2770, Fax. +90 212 282 6707 Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7, 252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461 United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes, MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421 United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409, Tel. +1 800 234 7381, Fax. +1 800 943 0087 Uruguay: see South America Vietnam: see Singapore Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD, Tel. +381 11 62 5344, Fax.+381 11 63 5777 For all other countries apply to: Philips Semiconductors, International Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria:Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210 Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6, 220050 MINSK, Tel. +375 172 20 0733, Fax. +375 172 20 0773 Belgium: see The Netherlands Brazil:see South America Bulgaria:Philips Bulgaria Ltd., Energoproject, 15th floor, 51 James Bourchier Blvd., 1407 SOFIA, Tel. +359 2 68 9211, Fax. +359 2 68 9102 Canada: PHILIPS SEMICONDUCTORS/COMPONENTS, Tel. +1 800 234 7381, Fax. +1 800 943 0087 China/Hong Kong: 501 Hong Kong Industrial Technology Centre,

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