BAS40 KEXIN | Alldatasheet
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Technical content
www.kexin.com.cn 1 Diodes Schottky Diodes BAS40/-04/-05/-06 ■ Features
- Low Forward Voltage
- Fast Switching 0.4+0.1 -0.1 2.9+0.1 -0.1 0.95+0.1 -0.1 1.9+0.1 -0.1 2.4+0.1 -0.1 1.3+0.1 -0.1 0-0.1 0.38+0.1 -0.1 0.97+0.1 -0.1 0.55 0.4 1 2 Unit: mmSOT-23 0.1+0.05 -0.01 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Peak Repetitive Peak Reverse Voltage VRRM Working Peak Reverse Voltage VRWM DC Blocking Voltage VR Forward Continuous Current IFM 200 mA Power Dissipation Pd 200 mW Thermal Resistance Junction to Ambient RθJA 500 ℃/W Junction Temperature TJ 125 Storage Temperature range Tstg -55 to 150 40 V ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Reverse breakdown voltage VR IR= 100 uA 40 VF1 IF= 1mA 0.38 VF2 IF= 40 mA 1 Reverse voltage leakage current IR1 VR= 30 V 200 nA Junction capacitance Cj VR= 0 V, f= 1 MHz 5 pF Reverse recovery time trr IF=IR=10mA,Irr=1mA, RL=100Ω 5 ns Forward voltage V ■ Marking NO BAS40 BAS40-06 BAS40-05 BAS40-04 Marking 43 46 45 44. BAS40 BAS40-06 BAS40-05 BAS40-04
www.kexin.com.cn2 Diod es Schottky Diodes BAS40/-04/-05/-06 ■ Typical Characterisitics 0 5 10 15 20 25 30 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 25 50 75 100 125 0.00 0.05 0.10 0.15 0.20 0.25 0 10 20 30 40 1E-3 0.01 0.1 100 0.1 100 REVERSE VOLTAGE VR (V) CAPACITANCE BETWEEN TERMINALS CT (pF) Ta=25℃ f=1MHz Capacitance Characteristics AMBIENT TEMPERATURE Ta ( )℃ POWER DISSIPATION PD (W) Power Derating Curve Ta=25℃ Ta=100℃ REVERSE CURRENT IR (uA) REVERSE VOLTAGE VR (V) Reverse Characteristics Ta=25℃ Ta=100℃ Forward Characteristics FORWARD CURRENT IF (mA) FORWARD VOLTAGE VF (V)