BAS40-04-200MA-SOT-23

BAS40-04-200MA-SOT-23 DGNJDZ | Alldatasheet

Document overview

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Technical content

SOT-23 Plastic-Encapsulate Diodes BAS40/-04/-05/-06 SCHOTTKY BARRIER DIODE

FEATURES

z Low Forward Voltage z Fast Switching BAS40 MARKING: 43• BAS40-06 MARKING: 46 BAS40-05 MARKING ：45 BAS40-04 MARKING ：44 Maximum Ratings @Ta=25℃ Parameter Symbol Limit Unit Peak repetitive peak reverse voltage Working peak reverse voltage DC blocking voltage V RRM V RWM V R 40 V Forward continuous current I FM 200 mA Power dissipation P D 200 mW Thermal resistance junction to ambient R θJA 500 ℃/W Junction temperature T J 125 ℃ Storage temperature range T STG - 55~+150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) P a r a m e t e r Symbol Test conditions M in Max Unit Reverse breakdown voltage V (BR) I R = 10 μ A 40 V Reverse voltage leakage current I R V R =30V 200 nA Forward voltage V F I F =1mA I F =40mA 380 1000 mV Diode capacitance C D V R =0,f=1MHz 5 pF Reverse recovery time t r r I rr =1mA, I R F =10mA R L =100Ω ns SOT-23 DONGGUAN NANJING ELECTRONICS LTD.,

1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 25 50 75 100 125 0.00 0.05 0.10 0.15 0.20 0.25 01 0 2 0 3 0 4 0 1E-3 0.01 0.1 100 0.1 100 REVERSE VOLTAGE V R (V) CAPACITANCE BETWEEN TERMINALS C T (pF) Ta=25 f=1MHz Capacitance Characteristics BAS40/-04/-05/-06Typical Characteristics AMBIENT TEMPERATURE T J ( ) POWER DISSIPATION P D (W) Power Derating Curve Ta=25 Ta=100 REVERSE CURRENT I R (uA) REVERSE VOLTAGE V R (V) Reverse Characteristics Ta=25 Ta=100 Forward Characteristics FORWARD CURRENT I F (mA) FORWARD VOLTAGE V F (V)