BAS40-04-05-06-SOT23 YFWDIODE | Alldatasheet
Document overview
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- PDF pages: 3
Technical content
■ Features
- Low Forward Voltage
- Fast Switching ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Peak Repetitive Peak Reverse Voltage V RRM Working Peak Reverse Voltage V RWM DC Blocking Voltage V R Forward Continuous Current I FM 200 mA Power Dissipation P d 200 mW Thermal Resistance Junction to Ambient R θJA 500 ℃/W Junction Temperature T J 125 Storage Temperature range T stg -55 to 150 40 V ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Reverse breakdown voltage V R I R = 100 uA 40 V I F = 1mA 0.38 V I F = 40 mA 1 Reverse voltage leakage current I V R = 30 V 200 nA Junction capacitance C j V R = 0 V, f= 1 MHz 5 pF Reverse recovery time t rr I F R =10mA,Irr=1mA, R L =100Ω 5 ns Forward voltage V ■ Marking NO BAS40 BAS40-06 BAS40-05 BAS40-04 Marking 43 46 45 44 BAS40 BAS40-06 BAS40-05 BAS40-04 BAS40/-04/-05/-06 Schottky Diodes Simplified outline(SOT-23) www.yfwdiode.com
■ Typical Characterisitics 0 5 10 15 20 25 30 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 25 50 75 100 125 0.00 0.05 0.10 0.15 0.20 0.25 0 10 20 30 40 1E-3 0.01 0.1 100 0.1 100 REVERSE VOLTAGE V R (V) CAPACITANCE BETWEEN TERMINALS C T (pF) Ta=25 f=1MHz Capacitance Characteristics AMBIENT TEMPERATURE T a ( ) POWER DISSIPATION P D (W) Power Derating Curve T a =25 T a =100 REVERSE CURRENT I R (uA) REVERSE VOLTAGE V R (V) Reverse Characteristics T a =25 T a =100 Forward Characteristics FORWARD CURRENT I F (mA) FORWARD VOLTAGE V F (V) BAS40/-04/-05/-06 www.yfwdiode.com
max. b p cD E e H E L p Qw v mm 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 0.95 e 1.9 2.5 2.1 0.55 0.45 0.10.2 DIMENSIONS (mm are the original dimensions) 0.45 0.15 bp D e A Lp Q detail X H E E w M v M A B A B 0 1 2 mm scale A 1.1 0.9 c X SOT-23 www.yfwdiode.com