BAS29 GWSEMI | Alldatasheet
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Technical content
Silicon Epitaxial Planar Switching Diodes BAS29 BAS31 BAS35 3 3 1 2 1 2 1 BAS29 Marking Code: L20 BAS31 Marking Code: L21 BAS35 Marking Code: L22 SOT-23 Plastic Package Absolute Maximum Ratings (T a = 25 O Parameter Symbol Value Unit Repetitive Peak Reverse Voltage V RRM 120 V Maximum Average Forward Current I F(AV) 200 mA Repetitive Peak Forward Current I FRM 600 mA Non-Repetitive Peak Forward Surge Current t = 1 µs t = 1 s I FSM A Power Dissipation P tot 350 mW Junction Temperature T j 150 O C Storage Temperature Range T stg - 55 to + 150 O C Characteristics at T a = 25 O C Parameter Symbol Min. Max. Unit Forward Voltage at I F = 10 mA at I F = 50 mA at I F = 100 mA at I F = 200 mA at I F = 400 mA V F V F V F V F V F 750 840 900 1.25 mV mV mV V V Reverse Current at V R = 90 V at V R = 90 V, T J = 150 O C I R I R 100 100 nA µA Reverse Breakdown Voltage at I R = 1 mA V (BR)R 120 V Total Capacitance at V R = 0 V, f = 1 MHz C T pF Reverse Recovery Time at I F = I R = 10 mA, I rr = 1 mA, R L = 100 Ω t rr ns BAS29-BAS31-BAS35
Plastic surface mounted package; 3 leads SOT-23 BAS29-BAS31-BAS35