BAS33_08 VISHAY | Alldatasheet

Document overview

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Technical content

Features

  • Silicon Planar Diodes  Very low reverse current  Lead (Pb)-free component  Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC

Applications

 Protection circuits, time delay circuits, peak fol- lower circuits, logarithmic amplifiers Mechanical Data Case: DO35 Glass case Weight: approx. 125 mg Cathode Band Color: black Packaging Codes/Options: TR/10 k per 13" reel (52 mm tape), 50 k/box TAP/10 k per Ammopack (52 mm tape), 50 k/box Parts Table Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Thermal Characteristics Tamb = 25 °C, unless otherwise specified Part Type differentiation Ordering code Type Marking Remarks BAS33 VRRM = 40 V BAS33-TAP or BAS33-TR BAS33 Ammopack/Tape and Reel BAS34 VRRM = 70 V BAS34-TAP or BAS34-TR BAS34 Ammopack/Tape and Reel Parameter Test condition Part Symbol Value Unit Reverse voltage BAS33 VR 30 V BAS34 VR 60 V Peak forward surge current tp = 1 µs I FSM 2A Forward continuous current IF 200 mA Parameter Test condition Symbol Value Unit Thermal resistance junction to ambient air l = 4 mm, TL = constant R thJA 350 K/W Junction temperature Tj 175 °C Storage temperature range Tstg - 65 to + 175 °C

www.vishay.com Document Number 85541 Rev. 1.6, 16-Feb-07 BAS33/BAS34 Vishay Semiconductors

Electrical Characteristics

Tamb = 25 °C, unless otherwise specified Typical Characteristics Tamb = 25 °C, unless otherwise specified Parameter Test condition Part Symbol Min Typ. Max Unit Forward voltage IF = 100 mA V F 1000 mV Reverse current E ≤ 300 lx, VR IR 13 n A E ≤ 300 lx, VR, Tj = 125 °C I R 0.5 μA E ≤ 300 lx, VR = 15V BAS33 IR 0.5 1 nA E ≤ 300 lx, VR = 30 V BAS34 IR 0.5 1 nA Breakdown voltage IR = 5 µA, tp/T = 0.01, tp = 0.3 ms BAS33 V(BR) 40 V BAS34 V(BR) 70 V Diode capacitance VR = 0, f = 1 MHz C D 3p F Figure 1. Reverse Current vs. Junction Temperature

10000 I- Reverse Current (nA) R

Figure 2. Forward Current vs. Forward Voltage

Rev. 1.6, 16-Feb-07 Vishay Semiconductors www.vishay.com Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releas es of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany

Document Number: 91000 www.vishay.com Revision: 18-Jul-08 1 Disclaimer Legal Disclaimer Notice Vishay All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all li ability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permit ted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purcha se, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medi cal, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners.