BAS32L SEMTECH_ELEC | Alldatasheet
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Technical content
Dated : 16/01/2003 SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) BAS32L HIGH SPEED DIODE
FEATURES
- Small hermetically-sealed glass SMD package
- High switching speed
- Continuous reverse voltage
- Repetitive peak reverse voltage
- Repetitive peak forward current APPLICATION
- High-Speed Switching
- Fast Logic Applications Absolute Maximum Ratings (Ta = 25 oC) Parameter Symbol Limits Unit Repetitive peak reverse voltage V RRM 75 V Continuous reverse voltage V R 75 V Continuous forward current (note1) I F 200 mA Repetitive peak forward current I FRM 450 mA Non-repetitive peak forward current Square wave, Tj = 25 ℃ prior to surge t=1 μs t=1ms t=1s IFSM 0.5 A Power dissipation P tot 500 mW Junction temperature T j 200 OC Storage temperature range T S -65 to +200 OC Thermal resistance from junction to tie point Rthjtp 300 K/W Thermal resistance from junction to ambient Rthja 350 K/W Note 1: Device mounted on an FR4printed- circuit board.
Dated : 16/01/2003 SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) BAS32L Electrical Characteristics (Ta = 25oC) Parameter Symbol Min. Typ. Max. Unit Forward voltage a t IF = 5mA a t IF = 100mA a t IF = 100mA, Tj = 100℃ VF VF VF 620 750 1000 930 mV mV mV Reverse current a t VR = 20V a t VR = 75V a t VR = 20V, Tj = 150℃ a t VR = 75V, Tj = 150℃ IR IR IR IR 100 nA μA μA μA Reverse breakdown voltage a t IR = 100μA V(BR)R 100 - - V Diode capacitance f = 1 M H z Cd - - 2 pF Reverse recovery time a t IF = 10mA, IR = 10mA, RL = 100Ω measured at IR = 1mA trr ns Forward recovery voltage I F = 50mA, tr = 20ns Vfr - - 2.5 V
Dated : 16/01/2003 SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) BAS32L AMBIENT TEMPERATURE Ta ( C ) 100 100 200 Maximum permissible continuous forward current as a function of ambient temperature IF (mA) 200 300 (3)(2)(1) (1) Tj=175 C ; typical values (2) Tj=25 C ; typical values (3) Tj=25 C ; maximum values 200 VF ( V ) 1 2 forward current as a function of forward voltage 600 IF (mA) 400 Based on square wave current Tj = 25 C prior to surge 1 10 tp (s ) 10 10 3 104 Maximum permissible non-repetitive peak forward current as a function of pulse duration IFSM (A)
Dated : 16/01/2003 SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) BAS32L (1) VR=75V; maximum values (2) VR=75V; typical values (3) VR=20V; typical values Tj ( C) REVERSE CURRENT AS A FUNCTION OF JUNCTION TEMPERATURE IR ( A) (1) (2) (3) f=1MHz; Tj=25 C 0.6 0.4 0.8 Cd (pF) VR ( V ) 10 20 1.0 1.2 Diode capacitance as a function of revese voltage ; typical values