BAS32L_05 PHILIPS | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 11

Technical content

  1. Product profile

1.1 General description

Single high-speed switching diode, fabricated in planar technology, and encapsulated in a small hermetically sealed glass SOD80C SMD package.

1.2 Features

■ Small hermetically sealed glass SMD package ■ High switching speed:≤ 4 ns ■ Continuous reverse voltage:≤ 75 V ■ Repetitive peak reverse voltage:≤ 100 V ■ Repetitive peak forward current:≤ 450 mA

1.3 Applications

■ High-speed switching ■ Inverse-polarity protection

1.4 Quick reference data

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. [2] When switched from IF = 10 mA to IR = 10 mA; RL = 100Ω ; measured at IR = 1 mA BAS32L High-speed switching diode Rev. 04 — 22 March 2005 Product data sheet Table 1: Quick reference data Symbol Parameter Conditions Min Typ Max Unit IF forward current [1] - - 200 mA IFRM repetitive peak forward current - - 450 mA VR reverse voltage - - 75 V VF forward voltage I F = 100 mA - - 1000 mV trr reverse recovery time [2] --4 n s

9397 750 14605 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 04 — 22 March 2005 2 of 11 Philips Semiconductors BAS32L High-speed switching diode 2. Pinning information [1] The marking band indicates the cathode. 3. Ordering information 4. Marking [1] black: made in Philippines brown: made in China 5. Limiting values Table 2: Pinning Pin Description Simplified outline Symbol 1 cathode [1] 2 anode ka sym006 Table 3: Ordering information Type number Package Name Description Version BAS32L - hermetically sealed glass surface mounted package; 2 connectors SOD80C Table 4: Marking codes Type number Marking code[1] BAS32L Marking band Table 5: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VRRM repetitive peak reverse voltage - 100 V VR reverse voltage - 75 V IF forward current [1] - 200 mA IFRM repetitive peak forward current - 450 mA IFSM non-repetitive peak forward current square wave [2] tp = 1µs- 4 A tp = 1 ms - 1 A tp = 1 s - 0.5 A Ptot total power dissipation Tamb = 25°C [1] - 500 mW

9397 750 14605 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 04 — 22 March 2005 3 of 11 Philips Semiconductors BAS32L High-speed switching diode [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Tj = 25°C prior to surge 6. Thermal characteristics [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. 7. Characteristics [1] When switched from IF = 10 mA to IR = 10 mA; RL = 100Ω ; measured at IR = 1 mA [2] When switched from IF = 50 mA; tr = 20 ns Tj junction temperature - 200 °C Tamb ambient temperature −65 +200 °C Tstg storage temperature −65 +200 °C Table 5: Limiting values …continued In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Table 6: Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit R th(j-a) thermal resistance from junction to ambient in free air [1] - - 350 K/W R th(j-sp) thermal resistance from junction to solder point - - 300 K/W Table 7: Characteristics Tamb = 25°C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit VF forward voltage IF = 5 mA 620 - 750 mV IF = 100 mA - - 1000 mV IF = 100 mA; Tj= 100°C - - 930 mV IR reverse current VR = 20 V - - 25 nA VR = 75 V - - 5 µA VR = 20 V; Tj = 150°C --5 0 µA VR = 75 V; Tj = 150°C - - 100 µA C d diode capacitance VR = 0 V; f = 1 MHz - - 2 pF trr reverse recovery time [1] --4 n s VFR forward recovery voltage [2] - - 2.5 V

9397 750 14605 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 04 — 22 March 2005 4 of 11 Philips Semiconductors BAS32L High-speed switching diode Mounted on an FR4 PCB; standard footprint (1) T j = 175°C; typical values (2) Tj = 25°C; typical values (3) Tj = 25°C; maximum values Fig 1. Maximum permissible forward current as a function of ambient temperature Fig 2. Forward current as a function of forward voltage Based on square wave currents Tj = 25°C prior to surge (1) VR = 75 V; maximum values (2) VR = 75 V; typical values (3) VR = 20 V; typical values Fig 3. Maximum permissible non-repetitive peak forward current as a function of pulse duration Fig 4. Reverse current as a function of junction temperature 0 100 200 300 200 100 mbg451 Tamb (°C) IF (mA) 012 600 200 400 mbg464 VF (V) IF (mA) (1) (2) (3) mbg704 102 IFSM (A) 10−1 tp (µs) 11 0 410310 10 2 0 100 Tj (oC) 200 103 102 10−1 10−2 (1) (2) IR (mA) mgd006 (3)

9397 750 14605 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 04 — 22 March 2005 5 of 11 Philips Semiconductors BAS32L High-speed switching diode Tj = 25°C; f = 1 MHz Fig 5. Diode capacitance as a function of reverse voltage; typical values 01 0 2 0 1.2 1.0 0.6 0.4 0.8 mgd004 VR (V) C d (pF)

9397 750 14605 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 04 — 22 March 2005 6 of 11 Philips Semiconductors BAS32L High-speed switching diode 8. Test information Input signal: Reverse pulse rise time tr = 0.6 ns; reverse voltage pulse duration tp = 100 ns; duty factorδ≤ 0.05 Oscilloscope: Rise time tr = 0.35 ns (1) IR = 1 mA Fig 6. Reverse recovery time test circuit and waveforms Input signal: Forward pulse rise time tr = 20 ns; forward current pulse duration tp ≥ 100 ns; duty factorδ≤ 0.005 Fig 7. Forward recovery voltage test circuit and waveforms trr (1) + IF t output signal tr tp t 10 % 90 %VR input signal V = VR + IF · R S R S = 50 W IF D.U.T. R i = 50 W SAMPLING OSCILLOSCOPE mga881 tr t tp 10 % 90 % I input signal R S = 50 Ω I R i = 50 Ω OSCILLOSCOPE 1 kΩ 450 Ω D.U.T. mga882 VFR t output signal V

9397 750 14605 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 04 — 22 March 2005 7 of 11 Philips Semiconductors BAS32L High-speed switching diode 9. Package outline 10. Packing information [1] For further information and the availability of packing methods, seeSection16. Fig 8. Package outline SOD80C REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC JEITA Note 1. The marking band indicates the cathode. SOD80C 100H01 97-06-20 05-01-26 Hermetically sealed glass surface mounted package; 2 connectors SOD80C UNIT D mm 1.60 1.45 3.7 3.3 0.3 H L DIMENSIONS (mm are the original dimensions) H D LL (1) 0 1 2 mm scale ka Table 8: Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number Package Description Packing quantity 2500 10000 BAS32L SOD80C 4 mm pitch, 8 mm tape and reel -115 -135

9397 750 14605 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 04 — 22 March 2005 8 of 11 Philips Semiconductors BAS32L High-speed switching diode 11. Soldering Dimensions in mm Fig 9. Reflow soldering footprint SOD80C Dimensions in mm Fig 10. Wave soldering footprint SOD80C MSA435 2.30 4.30 4.55 1.601.702.25 0.90 (2x) solder lands solder resist occupied area solder paste MSA461 2.70 4.90 6.30 1.702.90 solder lands solder resist occupied area 1.90 tracks

9397 750 14605 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 04 — 22 March 2005 9 of 11 Philips Semiconductors BAS32L High-speed switching diode 12. Revision history Table 9: Revision history Document ID Release date Data sheet status Change notice Doc. number Supersedes BAS32L_4 20050322 Product data sheet - 9397 750 14605 BAS32L_3 Modifications:

  • The format of this data sheet has been redesigned to comply with the new presentation and information standard of Philips Semiconductors.
  • Section 4 “Marking” added
  • Table6 “Thermal characteristics”R th(j-tp)thermal resistance from junction to tie-point redefined to R th(j-sp) thermal resistance from junction to solder point
  • Section 10 “Packing information” added
  • Section 11 “Soldering” added BAS32L_3 20020123 Product specification - 9397 750 09264 BAS32L_2 BAS32L_2 19960910 Product specification - 117021 BAS32L_1 BAS32L_1 19960423 Product specification - 113051 -

Philips Semiconductors BAS32L High-speed switching diode 9397 750 14605 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 04 — 22 March 2005 10 of 11 13. Data sheet status [1] Please consult the most recently issued data sheet before initiating or completing a design. [2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. [3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 14. Definitions Short-form specification —The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 15. Disclaimers Life support —These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes —Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 16. Contact information For additional information, please visit: http://www.semiconductors.philips.com For sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com Level Data sheet status[1] Product status[2][3] Definition I Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN).

© Koninklijke Philips Electronics N.V. 2005 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 22 March 2005 Document number: 9397 750 14605 Published in The Netherlands Philips Semiconductors BAS32L High-speed switching diode 17. Contents