BAS32L PHILIPS | Alldatasheet

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Technical content

Product specification Supersedes data of April 1996

1996 Sep 10

1/3 page (Datasheet) M3D054

1996 Sep 10 2

Philips Semiconductors Product specification High-speed diode BAS32L

FEATURES

  • Small hermetically sealed glass SMD package
  • High switching speed: max. 4 ns
  • Continuous reverse voltage: max. 75 V
  • Repetitive peak reverse voltage: max. 75 V
  • Repetitive peak forward current: max. 450 mA.

APPLICATIONS

  • High-speed switching
  • Fast logic applications.

DESCRIPTION

The BAS32L is a high-speed switching diode fabricated in planar technology, and encapsulated in the small hermetically sealed glass SOD80C SMD package. Fig.1 Simplified outline (SOD80C) and symbol. Cathode indicated by black band. handbook, 4 columns MAM061 ka LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). Note 1. Device mounted on an FR4 printed-circuit board. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VRRM repetitive peak reverse voltage − 75 V VR continuous reverse voltage − 75 V IF continuous forward current see Fig.2; note 1 − 200 mA IFRM repetitive peak forward current − 450 mA IFSM non-repetitive peak forward current square wave; Tj=2 5°C prior to surge; see Fig.4 t=1 µs − 4A t=1m s − 1A t=1s − 0.5 A Ptot total power dissipation T amb =2 5°C; note 1 − 500 mW Tstg storage temperature −65 +200 °C Tj junction temperature − 200 °C

1996 Sep 10 3

Philips Semiconductors Product specification High-speed diode BAS32L

ELECTRICAL CHARACTERISTICS

Tj=2 5°C; unless otherwise specified. THERMAL CHARACTERISTICS Note 1. Device mounted on an FR4 printed-circuit board. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VF forward voltage see Fig.3 IF = 5 mA 620 750 mV IF = 100 mA − 1000 mV IF = 100 mA; Tj= 100°C − 930 mV IR reverse current see Fig.5 VR =2 0V − 25 nA VR =7 5V − 5 µA VR =2 0V ; Tj= 150°C − 50 µA VR =7 5V ; Tj= 150°C − 100 µA V(BR)R reverse breakdown voltage I R = 100µA 100 − V C d diode capacitance f = 1 MHz; V R = 0; see Fig.6 2 pF trr reverse recovery time when switched from I F = 10 mA to IR = 10 mA; RL = 100Ω ; measured at IR = 1 mA; see Fig.7 4n s Vfr forward recovery voltage when switched from I F = 50 mA; tr = 20 ns; see Fig.8 − 2.5 V SYMBOL PARAMETER CONDITIONS VALUE UNIT R th j-tp thermal resistance from junction to tie-point 300 K/W R th j-a thermal resistance from junction to ambient note 1 350 K/W

1996 Sep 10 4

Philips Semiconductors Product specification High-speed diode BAS32L GRAPHICAL DATA Fig.2 Maximum permissible continuous forward current as a function of ambient temperature. Device mounted on an FR4 printed-circuit board. handbook, halfpage 0 100 200 300 200 100 MBG451 Tamb (oC) IF (mA) Fig.3 Forward current as a function of forward voltage. handbook, halfpage 012 600 200 400 MBG464 VF (V) IF (mA) (1) (2) (3) (1) Tj= 175°C; typical values. (2) Tj=2 5°C; typical values. (3) Tj=2 5°C; maximum values. Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration. Based on square wave currents. Tj=2 5°C prior to surge. handbook, full pagewidth MBG704 10 tp (µs)1 IFSM (A) 102 10−1 104102 103

1996 Sep 10 5

Philips Semiconductors Product specification High-speed diode BAS32L Fig.5 Reverse current as a function of junction temperature. handbook, halfpage 0 100 Tj (oC) 200 103 102 10−1 10−2 (1) (2) IR (µA) MGD006 (3) (1) VR = 75 V; maximum values. (2) VR = 75 V; typical values. (3) VR = 20 V; typical values. Fig.6 Diode capacitance as a function of reverse voltage; typical values. f = 1 MHz; Tj=2 5°C. handbook, halfpage 01 0 2 0 1.2 1.0 0.6 0.4 0.8 MGD004 VR (V) C d (pF)

1996 Sep 10 6

Philips Semiconductors Product specification High-speed diode BAS32L Fig.7 Reverse recovery voltage test circuit and waveforms. handbook, full pagewidth trr (1) IF t output signal tr t tp 10% 90%V R input signal V = V I x RRF S R = 50S Ω IF D.U.T. R = 50i Ω SAMPLING OSCILLOSCOPE MGA881 (1) IR = 1 mA. Fig.8 Forward recovery voltage test circuit and waveforms. tr t tp 10% 90% I input signal R = 50S Ω I R = 50i Ω OSCILLOSCOPE Ω1 k Ω450 D.U.T. MGA882 V fr t output signal V

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Philips Semiconductors Product specification High-speed diode BAS32L PACKAGE OUTLINE DEFINITIONS LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification. Fig.9 SOD80C. Dimensions in mm. handbook, full pagewidth MBA390 - 2 1.60 1.45 3.7 3.3 0.3 0.3 O