BAS321_04 PHILIPS | Alldatasheet
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Technical content
Product specification Supersedes data of 1999 Feb 09
2004 Jan 26
2004 Jan 26 2
Philips Semiconductors Product specification General purpose diode BAS321
FEATURES
- Small plastic SMD package
- Switching speed: max. 50 ns
- General application
- Continuous reverse voltage: max. 200 V
- Repetitive peak reverse voltage: max. 250 V
- Repetitive peak forward current: max. 625 mA.
APPLICATIONS
- General purpose switching in e.g. surface mounted circuits.
DESCRIPTION
The BAS321 is a general purpose diode fabricated in planar technology and encapsulated in a plastic SOD323 package. PINNING PIN DESCRIPTION 1 cathode 2 anode Fig.1 Simplified outline (SOD323) and symbol. Marking code: A7 The marking bar indicates the cathode. handbook, halfpage12 MAM406
ORDERING INFORMATION
In accordance with the Absolute Maximum Rating System (IEC 60134). Note 1. Device mounted on an FR4 printed circuit-board. TYPE NUMBER PACKAGE NAME DESCRIPTION VERSION BAS321 − plastic surface mounted package; 2 leads SOD323 SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VRRM repetitive peak reverse voltage − 250 V VR continuous reverse voltage − 200 V IF continuous forward current see Fig.2; note 1 − 250 mA IFRM repetitive peak forward current tp < 0.5 ms;δ≤ 0.25 − 625 mA IFSM non-repetitive peak forward current square wave; Tj=2 5°C prior to surge; see Fig.4 t=1 µs − 9A t = 100µs − 3A t = 10 ms − 1.7 A Ptot total power dissipation T amb =2 5°C; note 1 − 300 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C
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Philips Semiconductors Product specification General purpose diode BAS321 CHARACTERISTICS Tj=2 5°C unless otherwise specified. THERMAL CHARACTERISTICS Notes 1. Soldering point of cathode tab. 2. Device mounted on an FR4 printed circuit board. SYMBOL PARAMETER CONDITIONS MAX. UNIT V F forward voltage see Fig.3 IF = 100 mA 1 V IF = 200 mA 1.25 V IR reverse current see Fig.5 VR = 200 V 100 nA VR = 200 V; Tj= 150°C 100 µA C d diode capacitance f = 1 MHz; V R = 0; see Fig.6 2 pF trr reverse recovery time when switched from I F = 30 mA to IR = 30 mA; RL = 100Ω ; measured at IR = 3 mA; see Fig.8 50 ns SYMBOL PARAMETER CONDITIONS VALUE UNIT R th(j-s) thermal resistance from junction to soldering point Ts =9 0°C; note 1 130 K/W R th(j-a) thermal resistance from junction to ambient note 2 366 K/W
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Philips Semiconductors Product specification General purpose diode BAS321 GRAPHICAL DATA Fig.2 Maximum permissible continuous forward current as a function of ambient temperature. Device mounted on an FR4 printed-circuit board. handbook, halfpage 0 50 100 200 Tamb (°C) IF (mA) 300 100 200 150 MBK927 Fig.3 Forward current as a function of forward voltage. handbook, halfpage 600 IF (mA) 200 400 MBG384
1 VF (V)
(1) (3)(2) (1) Tj= 150°C; typical values. (2) Tj=2 5°C; typical values. (3) Tj=2 5°C; maximum values. Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration. Based on square wave currents. Tj=2 5°C prior to surge. handbook, full pagewidth MBG703 10 tp (µs)1 IFSM (A) 102 10−1 104102 103
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Philips Semiconductors Product specification General purpose diode BAS321 Fig.5 Reverse current as a function of junction temperature. (1) VR =V Rmax ; maximum values. (2) VR =V Rmax ; typical values. handbook, halfpage102 2000 MBG381
100 Tj (oC)
(µA) 10 2 10 1 (1) (2) Fig.6 Diode capacitance as a function of reverse voltage; typical values. f = 1 MHz; Tj=2 5°C. handbook, halfpage 048 62 1.0 0.8 0.2 0.6 0.4 MBG447 VR (V) C d (pF) Fig.7 Maximum permissible continuous reverse voltage as a function of the ambient temperature. handbook, halfpage 0 50 100 200 Tamb (°C) VR (V) 300 100 200 150 MBK926
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Philips Semiconductors Product specification General purpose diode BAS321 Fig.8 Reverse recovery time and waveforms. (1) IR =3m A Input signal: reverse pulse rise time tr = 0.6 ns; reverse voltage pulse duration tp = 100 ns; duty factorδ = 0.05; Oscilloscope: rise time tr = 0.35 ns; Circuit capacitance C≤ 1 pF (oscilloscope input + parasitic capacitance) handbook, full pagewidth trr (1) IF t output signal tr t tp 10% 90%V R input signal V = V I x RRF S R = 50S Ω IF D.U.T. R = 50i Ω SAMPLING OSCILLOSCOPE MGA881
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Philips Semiconductors Product specification General purpose diode BAS321 PACKAGE OUTLINE REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC JEITA SOD323 SC-76 SOD323 99-09-13 03-12-17 Note 1. The marking bar indicates the cathode UNIT A mm 0.051.1 0.8 0.40 0.25 0.25 0.10 1.8 1.6 1.35 1.15 2.7 2.3 0.45 0.15 A max DIMENSIONS (mm are the original dimensions) Plastic surface mounted package; 2 leads (1) 2 mm scale bp c D E H D Q 0.25 0.15 Lp v 0.2 AD A E Lp bp detail X A 1 c Q H D vAM X
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Philips Semiconductors Product specification General purpose diode BAS321 DATA SHEET STATUS Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was 3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. LEVEL DATA SHEET STATUS (1) PRODUCT STATUS (2)(3) DEFINITION I Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). DEFINITIONS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. DISCLAIMERS Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.
© Koninklijke Philips Electronics N.V. 2004 SCA76 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 Printed in The Netherlands R76/02/pp9 Date of release:2004 Jan 26 Document order number: 9397 750 12589