BAS321.115 NXP | Alldatasheet

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Technical content

Supersedes data of 1999 Feb 09

2004 Jan 26

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NXP Semiconductors Product data sheet General purpose diode BAS321

FEATURES

  • Small plastic SMD package
  • Switching speed: max. 50 ns
  • General application
  • Continuous reverse voltage: max. 200 V
  • Repetitive peak reverse voltage: max. 250 V
  • Repetitive peak forward current: max. 625 mA.

APPLICATIONS

  • General purpose switching in e.g. surface mounted circuits.

DESCRIPTION

The BAS321 is a general purpose diode fabricated in planar technology and encapsulated in a plastic SOD323 package. PINNING PIN DESCRIPTION 1 cathode 2 anode Fig.1 Simplified outline (SOD323) and symbol. Marking code: A7 The marking bar indicates the cathode. handbook, halfpage12 MAM406

ORDERING INFORMATION

In accordance with the Absolute Maximum Rating System (IEC 60134). Note 1. Device mounted on an FR4 printed circuit-board. TYPE NUMBER PACKAGE NAME DESCRIPTION VERSION BAS321 − plastic surface mounted package; 2 leads SOD323 SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VRRM repetitive peak reverse voltage − 250 V VR continuous reverse voltage − 200 V IF continuous forward current see Fig.2; note 1 − 250 mA IFRM repetitive peak forward current tp < 0.5 ms; δ ≤ 0.25 − 625 mA IFSM non-repetitive peak forward current square wave; Tj = 25 °C prior to surge; see Fig.4 t = 1 µs − 9 A t = 100 µs − 3 A t = 10 ms − 1.7 A Ptot total power dissipation Tamb = 25 °C; note 1 − 300 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C

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NXP Semiconductors Product data sheet General purpose diode BAS321 CHARACTERISTICS Tj = 25 °C unless otherwise specified. THERMAL CHARACTERISTICS Notes 1. Soldering point of cathode tab. 2. Device mounted on an FR4 printed circuit board. SYMBOL PARAMETER CONDITIONS MAX. UNIT VF forward voltage see Fig.3 IF = 100 mA 1 V IF = 200 mA 1.25 V IR reverse current see Fig.5 VR = 200 V 100 nA VR = 200 V; Tj = 150 °C 100 µA Cd diode capacitance f = 1 MHz; VR = 0; see Fig.6 2 pF trr reverse recovery time when switched from IF = 30 mA to IR = 30 mA; RL = 100 Ω; measured at IR = 3 mA; see Fig.8 50 ns SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth(j-s) thermal resistance from junction to soldering point Ts = 90°C; note 1 130 K/W Rth(j-a) thermal resistance from junction to ambient note 2 366 K/W

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NXP Semiconductors Product data sheet General purpose diode BAS321 GRAPHICAL DATA Fig.2 Maximum permissible continuous forward current as a function of ambient temperature. Device mounted on an FR4 printed-circuit board. handbook, halfpage 0 50 100 200 Tamb (°C) IF (mA) 300 100 200 150 MBK927 Fig.3 Forward current as a function of forward voltage. handbook, halfpage 600 IF (mA) 200 400 MBG384

1 VF (V)

(1) (3)(2) (1) T j = 150 °C; typical values. (2) T j = 25 °C; typical values. (3) T j = 25 °C; maximum values. Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration. Based on square wave currents. Tj = 25 °C prior to surge. handbook, full pagewidth MBG703 10 tp (µs)1 IFSM (A) 102 10−1 104102 103

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NXP Semiconductors Product data sheet General purpose diode BAS321 Fig.5 Reverse current as a function of junction temperature. (1) V R = VRmax; maximum values. (2) V R = VRmax; typical values. handbook, halfpage102 2000 MBG381

100 Tj (oC)

(µA) 10 2 10 1 (1) (2) Fig.6 Diode capacitance as a function of reverse voltage; typical values. f = 1 MHz; Tj = 25 °C. handbook, halfpage 048 62 1.0 0.8 0.2 0.6 0.4 MBG447 VR (V) Cd (pF) Fig.7 Maximum permissible continuous reverse voltage as a function of the ambient temperature. handbook, halfpage 0 50 100 200 Tamb (°C) VR (V) 300 100 200 150 MBK926

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NXP Semiconductors Product data sheet General purpose diode BAS321 Fig.8 Reverse recovery time and waveforms. (1) IR = 3 mA Input signal: reverse pulse rise time tr = 0.6 ns; reverse voltage pulse duration tp = 100 ns; duty factor δ = 0.05; Oscilloscope: rise time tr = 0.35 ns; Circuit capacitance C ≤ 1 pF (oscilloscope input + parasitic capacitance) handbook, full pagewidth t rr (1) IF t output signal tr t t p 10% 90%VR input signal V = V I x RRF S R = 50S Ω IF D.U.T. R = 50i Ω SAMPLING OSCILLOSCOPE MGA881

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NXP Semiconductors Product data sheet General purpose diode BAS321 PACKAGE OUTLINE REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC JEITA SOD323 SC-76 SOD323 03-12-17 06-03-16 Note 1. The marking bar indicates the cathode UNIT A mm 0.051.1 0.8 0.40 0.25 0.25 0.10 1.8 1.6 1.35 1.15 2.7 2.3 0.45 0.15 max DIMENSIONS (mm are the original dimensions) Plastic surface-mounted package; 2 leads (1) 2 mm scale bp c D E HD Q 0.25 0.15 Lp v 0.2 AD A E Lp bp detail X c Q HD vAM X

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NXP Semiconductors Product data sheet General purpose diode BAS321 DATA SHEET STATUS Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. DISCLAIMERS General ⎯ Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes ⎯ NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use ⎯ NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications ⎯ Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale ⎯ NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license ⎯ Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control ⎯ This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data ⎯ The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding.

For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Printed in The Netherlands R76/02/pp9 Date of release: 2004 Jan 26 Document order number: 9397 750 12589