BAS316WS GWSEMI | Alldatasheet
Document overview
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Technical content
DESCRIPTION
Silicon Epitaxial Planar Switching Diode
Applications
- High-speed switching PINNING Top View Marking Code: Simplified outline SOD-323 and symbol Absolute Maximum Ratings a = 25 O Parameter Symbol Value Unit Repetitive Peak Reverse Voltage V RRM 100 V Reverse Voltage V R 100 V Continuous Forward Current I F 250 mA Repetitive Peak Forward Current I FRM 500 mA Non-Repetitive Peak Forward Current t = 1 µs t = 1 ms t = 1 s I FSM 0.5 A Total Power Dissipation P tot 200 mW Junction Temperature T j 150 O C Storage Temperature Range T stg - 65 to + 150 O C Characteristics at T a = 25 O C Parameter Symbol Max. Unit Forward Voltage at I F = 1 mA at I F = 10 mA at I F = 50 mA at I F = 150 mA V F 0.715 0.855 1.25 V Reverse Current at V R = 25 V at V R = 75 V at V R = 25 V, T J = 150 O C at V R = 75 V, T J = 150 O C I R nA µA µA µA Diode Capacitance at V R = 0 V, f = 1 MHz C tot 1.5 pF Reverse Recovery Time at I F = I R = 10 mA, I rr = 0.1 X I R , R L = 100 Ω t rr ns MARKING: AS316WS B
B
Plastic surface mounted package; 2 leads SOD-323 AS316WS B