BAS316115 NXP | Alldatasheet

Document overview

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Technical content

1.1 General description

1.2 Features

1.3 Applications

Table 1. Product overview

BAS16_SER_5 © NXP B.V. 2008. All rights reserved.

1.4 Quick reference data

[1] When switched from IF = 10 mA to IR = 10 mA; RL = 100Ω ; measured at IR = 1 mA. [1] The marking bar indicates the cathode. Table 2. Quick reference data Table 3. Pinning

BAS16_SER_5 © NXP B.V. 2008. All rights reserved. Table 4. Ordering information Table 5. Marking codes

BAS16_SER_5 © NXP B.V. 2008. All rights reserved. Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).

BAS16_SER_5 © NXP B.V. 2008. All rights reserved. [2] Device mounted on an FR4 PCB with 60µm copper strip line. [5] Reflow soldering is the only recommended soldering method. [6] Soldering point of cathode tab. [8] Soldering points at pins 4, 5 and 6. Table 6. Limiting values …continued In accordance with the Absolute Maximum Rating System (IEC 60134). Table 7. Thermal characteristics

BAS16_SER_5 © NXP B.V. 2008. All rights reserved. [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB with 60µm copper strip line. [3] Reflow soldering is the only recommended soldering method. [6] Soldering point of cathode tab. [7] Soldering points at pins 4, 5 and 6. [2] When switched from IF = 10 mA to IR = 10 mA; RL = 100Ω ; measured at IR = 1 mA. [3] When switched from IF = 10 mA; tr =2 0n s . Table 7. Thermal characteristics …continued Table 8. Characteristics Tamb =2 5°C unless otherwise specified.

BAS16_SER_5 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 05 — 25 August 2008 7 of 20 NXP Semiconductors BAS16 series High-speed switching diodes (1) Tamb = 150°C (2) Tamb =8 5°C (3) Tamb =2 5°C (4) Tamb = −40 °C Based on square wave currents. Tj=2 5°C; prior to surge Fig 1. Forward current as a function of forward voltage; typical values Fig 2. Non-repetitive peak forward current as a function of pulse duration; maximum values (1) Tamb = 150°C (2) Tamb =8 5°C (3) Tamb =2 5°C (4) Tamb = −40 °C f = 1 MHz; Tamb =2 5°C Fig 3. Reverse current as a function of reverse voltage; typical values Fig 4. Diode capacitance as a function of reverse voltage; typical values 006aab132 102 103 IF (mA) 10-1 VF (V) (1) (2) (3) (4) mbg704 102 IFSM (A) 10−1 tp (µs) 11 0 410310 10 2 006aab133102 IR (mA) VR (V) 0 100 8040 6020 10-1 10-2 10-3 10-4 10-5 (1) (2) (3) (4) 08 1 6 124 0.8 0.6 0.4 0.2 mbg446 VR (V) C d (pF)

BAS16_SER_5 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 05 — 25 August 2008 8 of 20 NXP Semiconductors BAS16 series High-speed switching diodes 8. Test information 9. Package outline (1) IR =1m A Input signal: reverse pulse rise time tr = 0.6 ns; reverse voltage pulse duration tp = 100 ns; duty cycleδ = 0.05 Oscilloscope: rise time tr = 0.35 ns Fig 5. Reverse recovery time test circuit and waveforms Input signal: forward pulse rise time tr = 20 ns; forward current pulse duration tp ≥ 100 ns; duty cycleδ≤ 0.005 Fig 6. Forward recovery voltage test circuit and waveforms trr (1) + IF t output signal tr tp t 10 % 90 %VR input signal V = VR + IF · R S R S = 50 W IF D.U.T. R i = 50 W SAMPLING OSCILLOSCOPE mga881 tr t tp 10 % 90 % I input signal R S = 50 Ω I R i = 50 Ω OSCILLOSCOPE 1 kΩ 450 Ω D.U.T. mga882 VFR t output signal V Fig 7. Package outline BAS16 (SOT23/TO-236AB) Fig 8. Package outline BAS16H (SOD123F) 04-11-04Dimensions in mm 0.45 0.15 1.9 1.1 0.9 3.0 2.8 2.5 2.1 1.4 1.2 0.48 0.38 0.15 0.09 04-11-29Dimensions in mm 1.2 1.0 0.25 0.10 3.6 3.4 2.7 2.5 0.55 0.35 0.70 0.55 1.7 1.5

BAS16_SER_5 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 05 — 25 August 2008 9 of 20 NXP Semiconductors BAS16 series High-speed switching diodes Fig 9. Package outline BAS16J (SOD323F/SC-90) Fig 10. Package outline BAS16L (SOD882) Fig 11. Package outline BAS16T (SOT416/SC-75) Fig 12. Package outline BAS16VV (SOT666) Fig 13. Package outline BAS16VY (SOT363) Fig 14. Package outline BAS16W (SOT323/SC-70) 04-09-13Dimensions in mm 0.80 0.65 0.25 0.10 0.5 0.3 2.7 2.3 1.8 1.6 0.40 0.25 1.35 1.15 03-04-17Dimensions in mm 0.55 0.47 0.65 0.62 0.55 0.50 0.46 cathode marking on top side 1.02 0.95 0.30 0.22 0.30 0.22 04-11-04Dimensions in mm 0.95 0.60 1.8 1.4 1.75 1.45 0.9 0.7 0.25 0.10 0.30 0.15 3 0.45 0.15 Dimensions in mm 04-11-08 1.7 1.5 1.7 1.5 1.3 1.1 0.18 0.08 0.27 0.170.5 pin 1 index 123 456 0.6 0.5 0.3 0.1 06-03-16Dimensions in mm 0.25 0.10 0.3 0.2 pin 1 index 1.3 0.65 2.2 2.0 1.35 1.15 2.2 1.8 1.1 0.8 0.45 0.15 13 2 465 04-11-04Dimensions in mm 0.45 0.15 1.1 0.8 2.2 1.8 2.2 2.0 1.35 1.15 1.3 0.4 0.3 0.25 0.10

BAS16_SER_5 © NXP B.V. 2008. All rights reserved. [1] For further information and the availability of packing methods, seeSection14. Table 9. Packing methods

BAS16_SER_5 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 05 — 25 August 2008 11 of 20 NXP Semiconductors BAS16 series High-speed switching diodes 11. Soldering Fig 17. Reflow soldering footprint BAS16 (SOT23/TO-236AB) Fig 18. Wave soldering footprint BAS16 (SOT23/TO-236AB) solder lands solder resist occupied area solder paste sot023_fr 0.5 (3·) 0.6 (3·) 0.6 (3·) 0.7 (3·) 3.3 2.9 1.7 1.9 Dimensions in mm solder lands solder resist occupied area preferred transport direction during soldering sot023_fw 2.8 4.5 1.4 4.6 1.4 (2·) 1.2 (2·) 2.2 2.6 Dimensions in mm

BAS16_SER_5 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 05 — 25 August 2008 12 of 20 NXP Semiconductors BAS16 series High-speed switching diodes Reflow soldering is the only recommended soldering method. Dimensions in mm Fig 19. Reflow soldering footprint BAS16H (SOD123F) Reflow soldering is the only recommended soldering method. Fig 20. Reflow soldering footprint BAS16J (SOD323F) 1.6 1.6 2.9 4.4 1.1 1.22.1 1.1 (2×) solder lands solder resist occupied area solder paste 0.951.65 2.2 2.1 3.05 solder lands solder resist occupied area solder paste Dimensions in mm 0.5 (2×) 0.6 (2×) 0.6 (2×)0.5 (2×) sod323f_fr

BAS16_SER_5 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 05 — 25 August 2008 13 of 20 NXP Semiconductors BAS16 series High-speed switching diodes Reflow soldering is the only recommended soldering method. Fig 21. Reflow soldering footprint BAS16L (SOD882) Fig 22. Reflow soldering footprint BAS16T (SOT416/SC-75) solder lands solder resist occupied area solder paste sod882_fr 0.9 0.3 (2·) R0.05 (8·) 0.6 (2·) 0.7 (2·) 0.4 (2·) 1.3 0.7 Dimensions in mm solder lands solder resist occupied area solder paste sot416_fr 0.85 1.7 2.2 0.5 (3×) 0.6 (3×) 1.3 Dimensions in mm

BAS16_SER_5 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 05 — 25 August 2008 14 of 20 NXP Semiconductors BAS16 series High-speed switching diodes Reflow soldering is the only recommended soldering method. Fig 23. Reflow soldering footprint BAS16VV (SOT666) Fig 24. Reflow soldering footprint BAS16VY (SOT363/SC-88) solder lands placement area occupied area solder paste sot666_fr 2.75 2.45 2.1 1.6 0.4 (6×) 0.55 (2×) 0.25 (2×) 0.6 (2×) 0.65 (2×) 0.3 (2×) 0.325 (4×) 0.45 (4×) 0.5 (4×) 0.375 (4×) 1.72 1.7 1.075 0.538 Dimensions in mm solder lands solder resist occupied area solder paste sot363_fr 2.65 2.35 0.4 (2·) 0.6 (2·) 0.5 (4·) 0.5 (4·) 0.6 (4·) 0.6 (4·) 1.5 1.8 Dimensions in mm

BAS16_SER_5 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 05 — 25 August 2008 15 of 20 NXP Semiconductors BAS16 series High-speed switching diodes Fig 25. Wave soldering footprint BAS16VY (SOT363/SC-88) Fig 26. Reflow soldering footprint BAS16W (SOT323/SC-70) sot363_fw solder lands solder resist occupied area preferred transport direction during soldering 5.3 1.3 1.3 1.5 0.3 1.5 4.5 2.45 2.5 Dimensions in mm solder lands solder resist occupied area solder paste sot323_fr 2.65 2.35 0.6 (3·) 0.5 (3·) 0.55 (3·) 1.325 1.85 1.33 Dimensions in mm

BAS16_SER_5 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 05 — 25 August 2008 16 of 20 NXP Semiconductors BAS16 series High-speed switching diodes Fig 27. Wave soldering footprint BAS16W (SOT323/SC-70) Fig 28. Reflow soldering footprint BAS316 (SOD323/SC-76) sot323_fw 3.65 2.1 1.425 (3·) 4.6 (2·) 2.575 1.8 solder lands solder resist occupied area preferred transport direction during soldering Dimensions in mm 0.951.65 2.2 2.1 3.05 solder lands solder resist occupied area solder paste 0.5 (2·) 0.6 (2·) 0.6 (2·)0.5 (2·) sod323_fr Dimensions in mm

BAS16_SER_5 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 05 — 25 August 2008 17 of 20 NXP Semiconductors BAS16 series High-speed switching diodes Fig 29. Wave soldering footprint BAS316 (SOD323/SC-76) Reflow soldering is the only recommended soldering method. Fig 30. Reflow soldering footprint BAS516 (SOD523/SC-79) 1.5 (2·) 2.9 1.2 (2·)2.75 sod323_fw solder lands solder resist occupied area preferred transport direction during soldering Dimensions in mm solder lands solder resist occupied area solder paste Dimensions in mm 0.6 (2·) 0.5 (2·) 2.15 1.1 0.7 (2·) 0.8 (2·) 1.2 sod523_fr

BAS16_SER_5 © NXP B.V. 2008. All rights reserved. Table 10. Revision history

  • The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors.
  • Legal texts have been adapted to the new company name where appropriate.
  • Table 5 “Marking codes”: marking code amended for BAS16W
  • Table 6 “Limiting values”: for BAS16, BAS16T, BAS16W and BAS516 change of VRRM maximum value from 85 V to 100 V
  • Table 6 “Limiting values”: for BAS16, BAS16L, BAS16T, BAS16W and BAS516 change of VR maximum value from 75 V to 100 V
  • Table 8 “Characteristics”: change of IR condition VR from 75 V to 80 V for Tj=2 5°C
  • Table8 “Characteristics”: change of IR maximum value from 1.0µAt o0 . 5µA for VR =8 0V and Tj=2 5°C
  • Table 8 “Characteristics”: change of IR condition VR from 75 V to 80 V for Tj= 150°C
  • Section 13 “Legal information”: updated BAS16_4 20011010 Product specification - BAS16_3 BAS16H_1 20050415 Product data sheet - - BAS16J_1 20070308 Product data sheet - - BAS16L_1 20030623 Product specification - - BAS16T_1 19980120 Product specification - - BAS16VV_BAS16VY_3 20070420 Product data sheet - BAS16VV_BAS16VY_2 BAS16W_4 19990506 Product specification - BAS16W_3 BAS316_4 20040204 Product specification - BAS316_3 BAS516_1 19980831 Product specification - -

BAS16_SER_5 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 05 — 25 August 2008 19 of 20 NXP Semiconductors BAS16 series High-speed switching diodes 13. Legal information

13.1 Data sheet status

[1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com.

13.2 Definitions

Draft —The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet —A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.

13.3 Disclaimers

General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes —NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use —NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications —Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values —Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale —NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms , including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license —Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Quick reference data —The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding.

13.4 Trademarks

Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 14. Contact information For more information, please visit:http://www.nxp.com For sales office addresses, please send an email to:salesaddresses@nxp.com Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification.

NXP Semiconductors BAS16 series High-speed switching diodes © NXP B.V. 2008. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 25 August 2008 Document identifier: BAS16_SER_5 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. 15. Contents