DATASHEET SEARCH SITE | WWW.ALLDATASHEET.COM

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 3

Technical content

FEATURES

  • Ultra small plastic SMD package
  • High switching speed: max. 4 ns
  • Continuous reverse voltage: max. 75 V
  • Repetitive peak reverse voltage: max. 100 V
  • Repetitive peak forward current: max. 500 mA.

APPLICATIONS

  • High-speed switching in e.g. surface mounted circuits.

DESCRIPTION

The BAS316 is a high-speed switching diode fabricated in planar technology, and encapsulated in the SOD323(SC76) SMD plastic package. We declare that the material of product compliance with RoHS requirements. ELECTRICAL CHARACTERISTICS T j =25°C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MAX. UNIT V F forward voltage see Fig.2 I F = 1 mA 715 mV I F = 10 mA 855 mV I F =50 mA 1 V I F = 150 mA 1.25 V I R reverse current see Fig.4 V R = 25 V 30 nA V R =75 V 1 µA V R = 25 V; T j = 150 °C 30 µA V R = 75 V; T j = 150 °C; 50 µA C d diode capacitance f = 1 MHz; V R = 0; see Fig.5 2 pF t rr reverse recovery time when switched from I F=10mA to I R= 10mA; 4 ns R L = 100 ; measured at I R = 1 mA; see Fig.6 V fr forward recovery voltage when switched from IF = 10 mA; tr = 20 ns; see Fig.7 1.75 V SOD– 323 S-BAS316

  • S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. Device Marking Shipping

ORDERING INFORMATION

BAS316 Z9 3000 Tape & Reel BAS316 Z9 10000 Tape & Reel S-BAS316 S-BAS316 Lead(Pb)-FreeP b Ω http://www.weitron.com.tw WEITRON 1/3 03-Jul-2015

V F ( V ) I F (mA) Fig.2 Forward current as a function of forward voltage. (1) T j = 150 °C; typical values. (2)T j =25°C; typical values. (3) T j =25°C; maximum values. Fig.3 Maximum permissible non-repetitive peak forward current as a function of pulse duration. Based on square wave currents; T j =25°C prior to surge. t P ( µs ) I FSM (A) 10 2 10 -1 11 10 02 103 104 LIMITIN G VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VRRM repetitive peak reverse voltage 100 V V R continuous reverse voltage – 75 V I F continuous forward current – 250 mA I FRM repetitive peak forward current – 500 mA I FSM non-repetitive peak forward current square wave; T j =25°C prior to surge; see Fig.3 t =1µs – 5 A t =1 ms – 1 A t =1 s – 0.5 A P tot total power dissipation – 200 mW T stg storage temperature -55 +150 °C T j junction temperature – 150 °C TEMPERATURE (°C) 250 100 50 75 100 125 150 Fig.1 Steady State Power Derating V R(RMS) 53 VRMS reverse voltage – thermal resistance junction to ambient air R JA C/W– 625 BAS316 S-BAS316 http://www.weitron.com.tw WEITRON 2/3 03-Jul-2015 ( )

(1) I R = 1 mA. Input signal: reverse pulse rise time t r = 0.6 ns; reverse voltage pulse duration t p = 100 ns; duty factor δ = 0.05; Oscilloscope: rise time t r = 0.35 ns. Fig.6 Reverse recovery voltage test circuit and waveforms. Input signal: forward pulse rise time t r = 20 ns; forward current pulse duration t p 100 ns; duty factor δ 0.005. Fig.7 Forward recovery voltage test circuit and waveforms. 2.0 1.6 0.8 0 100 200 T J ( °C ) I R (nA) C d (pF) 0 4 8 12 16 10 5 10 4 10 3 10 2 V R( V ) f = 1 MHz ; T j =25°C; Fig.4 Reverse current as a function of junction temperature. Fig.5 Diode capacitance as a function of reverse voltage; typical values. BAS316 S-BAS316 ≥ ≤ http://www.weitron.com.tw WEITRON 3/3 03-Jul-2015