BAS316_15 TSC | Alldatasheet

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Technical content

  • Fast switching device (trr<4.0ns) - Surface mount device type - Moisture sensitivity level 1 - Matte Tin (Sn) lead finish - Pb free version and RoHS compliant - Packing code with suffix "G" means green compound (halogen-free) - Case: Bend lead SOD-323 small outline plastic package - Polarity: Indicated by cathode band - Weight: 4.85 ± 0.5 mg - Marking Code: A6 SYMBOL UNITS P D mW IO mA TJ , TSTG oC SYMBOL UNITS V(BR) V CJ pF trr ns Document Number: DS_S1311003 Version: C14 SOD-323 IF = 10 mA IF = 1.0 mA IF = IR = 10 mA , RL = 100 Ω VR = 0 , f = 1.0 MHz VR = 25 V VR = 75 V IF = 150 mA IF = 50 mA -1 . 5 Reverse Breakdown Voltage Forward Voltage Reverse Leakage Voltage Junction Capacitance Reverse Recovery Time IR = 100 μA - 0.855 - 1.000 - 1.250 V μA V F IR - 0.715 -1 . 0 0 -0 . 0 3 MIN MAX Mean forward current 250 A1.0 4.0IFRM Non-repetitive peak forward current Pulse Width = 1 μsec Pulse Width = 1 msec -100 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted) PARAMETER VALUE Power dissipation 200 Junction and storage temperature range -65 to + 150 PARAMETER MECHANICAL DATA - Terminal: Matte tin plated, lead free., solderable per MIL-STD-202, Method 208 guaranteed - High temperature soldering guaranteed : 260°C/10s BAS316 Taiwan Semiconductor Small Signal Product 200mW High Voltage SMD Switching Diode

FEATURES

(TA=25°C unless otherwise noted) Document Number: DS_S1311003 Version: C14 RATINGS AND CHARACTERISTICS CURVES BAS316 Taiwan Semiconductor Small Signal Product 0.001 0.01 0.1 Instantaneous Forward Current (mA) Instantaneous Forward Voltage (V) Fig. 1 Typical Forward Characteristics 0.01 0.1 100 0 2 04 06 08 0 1 0 0 1 2 0 Reverse Current (uA) Reverse Voltage (V) Fig. 2 Reverse Current VS. Reverse Voltage 100 150 200 250 0 25 50 75 100 125 150 175 Power Dissipation (mW) Ambient Temperature (°C) Fig. 3 Admissible Power Dissipation Curve 0.3 0.6 0.9 1.2 1.5 02468 1 0 1 2 1 4 1 6 Junction Capacitance (pF) Reverse Voltage (V) Fig. 4 Typical Junction Capacitance

A 1.150 1.400 0.045 0.055 B 2.300 2.700 0.091 0.106 C 0.250 0.450 0.010 0.018 D 1.600 1.800 0.063 0.071 E 0.800 1.000 0.031 0.039 F 0.050 0.177 0.002 0.007 G H - 0.100 - 0.004 SUGGESTED PAD LAYOUT G X Y Document Number: DS_S1311003 Version: C14 ORDER INFORMATION (EXAMPLE) Min 0.59 DIM. Unit (mm) Unit (inch) 0.475 REF 0.019 REF DIM. Unit (mm) Unit (inch) Min 0.0601.52 BAS316 Taiwan Semiconductor Small Signal Product 0.0180.45 0.1062.70 0.023 B A E D C F G H BAS316 RRG Green compound code Packing code Part no.

assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied,to any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or seling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. Document Number: DS_S1311003 Version: C14 BAS316 Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,