BAS31 FAIRCHILD | Alldatasheet
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High Voltage General Purpose Diode Sourced from Process 1H. See BAV19 / 20 / 21 for characteristics. Absolute Maximum Ratings* TA = 25°C unless otherwise noted *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES : 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Symbol Parameter Value Units W IV Working Inverse Voltage 90 V IO Average Rectified Current 200 mA IF DC Forward Current 600 mA if Recurrent Peak Forward Current 700 mA if(surge) Peak Forward Surge Current Pulse width = 1.0 second Pulse width = 1.0 microsecond 1.0 2.0 A A Tstg Storage Temperature Range -50 to +150 °C TJ Operating Junction Temperature 150 °C Symbol Characteristic Max Units BAS31 PD Total Device Dissipation Derate above 25°C 350 2.8 mW mW/ °C RθJA Thermal Resistance, Junction to Ambient 357 °C/W CONNECTION DIAGRAM L21 SOT-23 BAS31 Discrete POWER & Signal Technologies 1997 Fairchild Semiconductor Corporation
Electrical Characteristics TA = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Max Units BV Breakdown Voltage I R = 1.0 mA 120 V IR Reverse Current V R = 90 V VR = 90 V, TA = 150°C 100 100 nA µA VF Forward Voltage I F = 10 mA IF = 50 mA IF = 100 mA IF = 200 mA IF = 400 mA 750 840 900 1.0 1.25 mV mV mV V V CO Diode Capacitance V R = 0, f = 1.0 MHz 35 pF TRR Reverse Recovery Time I F = IR = 30 mA, VR = 6.0 V, IRR = 3.0 mA, RL = 100Ω 50 nS BAS31 High Voltage General Purpose Diode (continued)