BAS21 ONSEMI | Alldatasheet
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To learn more about ON Semiconductor, please visit our website at www.onsemi.com Is Now Part of ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
BAS21 — General-Purpose High Voltage Diode © 1999 Fairchild Semiconductor Corporation www.fairchildsemi.com BAS21 Rev. 1.3 May 2016 BAS21 General-Purpose High Voltage Diode
Ordering Information
Absolute Maximum Ratings(1), (2) Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera- ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi- tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. Notes: 1. These ratings are based on a maximum junction temperature of 150C. 2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or low-duty-cycle operations. Part Number Top Mark Package Packing Method BAS21 A82. SOT-23 3L Tape and Reel Symbol Parameter Value Unit WIV Working Inverse Voltage 250 V IO Average Rectified Current 200 mA IF DC Forward Current 600 mA if Recurrent Peak Forward Current 700 mA if(surge) Peak Forward Surge Current Pulse Width = 1.0 second 1.0 A Pulse Width = 1.0 microsecond 2.0 TSTG Storage Temperature Range -55 to +150 C TJ Operating Junction Temperature 150 C SOT-23 A82. 12 2 NC CONNECTION DIAGRAM
BAS21 — General-Purpose High Voltage Diode © 1999 Fairchild Semiconductor Corporation www.fairchildsemi.com BAS21 Rev. 1.3 2 Thermal Characteristics Values are at TA = 25°C unless otherwise noted.
Electrical Characteristics
Values are at TA = 25°C unless otherwise noted. Symbol Parameter Max. Unit PD Total Device Dissipation 350 mW Derate Above 25C2 . 8 m W / C RJA Thermal Resistance, Junction-to-Ambient 357 C/W Symbol Parameter Conditions Min. Max. Unit BV Breakdown Voltage I R = 100 A2 5 0 V IR Reverse Voltage Leakage Current VR = 200 V 100 nA VR = 200 V, TA = 150°C 100 A VF Forward Voltage IF = 100 mA 1.0 V IF = 200 mA 1.25 V CO Diode Capacitance V R = 0, f = 1.0 MHz 5.0 pF TRR Reverse Recovery Time IF = IR = 30 mA, IRR = 3.0 mA, RL = 100 50 nS
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