BAS21 KEC | Alldatasheet

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Technical content

  1. 1. 23 1/2 SEMICONDUCTOR TECHNICAL DATA BAS21 SILICON EPITAXIAL PLANAR DIODE Revision No : 1 High Voltage Switching.

FEATURES

¡¤High Reliability. ¡¤Small surface mounting type (SOT-23). MAXIMUM RATING (Ta=25¡É) DIM MILLIMETERS 1. NC 2. ANODE 3. CATHODE SOT-23 A B C D E 2.93 0.20 1.30+0.20/-0.15 0.45+0.15/-0.05 2.40+0.30/-0.20 G 1.90 H J K L M N 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55

0.20 MIN

1.00+0.20/-0.10 M J K E 2 3 H G A N C B D 1.30 MAX LL PP P 7 2 1 ELECTRICAL CHARACTERISTICS (Ta=25¡É) CHARACTERISTIC SYMBOL RATING UNIT Maximum (Peak) Reverse Voltage VRM 300 V Reverse Voltage VR 250 V Continuous Forward Current IF 250 mA Surge Current (10mS) IFSM 2 A Power Dissipation PD 250* mW 300** Junction Temperature Tj 150 ¡É Storage Temperature Range Tstg -55¡­150 ¡É CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Forward Voltage VF IF=150mA - - 1.25 V Reverse Current ¥ìA IR(2) VR=300V - - 100 Total Capacitance CT VR=0V, f=1MHz - - 3 pF Reverse Recovery Time trr IR=30mA, IF=30mA - - 100 nS Type Name Marking Lot No. H 9 * Note1 : Package Mounted On FR-5 Board (25.4¡¿19.05¡¿1.57mm) ** Note2 : Package Mounted On 99.5% Alumina (10¡¿8¡¿0.6mm)

  1. 1. 23 2/2Revision No : 1 BAS21 C - V RREVERSE VOLTAGE V (V) 01 0 2 0 3 0 REVERSE CURRENT I (nA) T R 1.0 1.1 1.2 1.3 1.4 R 1.5 Ta=25 C f=1MHz Ta=25 CTa=25 C I - VRR RREVERSE VOLTAGE V (V) 0.1 TTERMINAL CAPACITANCE C (pF) 50 100 150 200 250 300 100 FORWARD CURRENT I (µA)F FORWARD VOLTAGE V (mV)F I - VF F 0 200 400 600 800 1000 1200 0.0001 0.001 0.01 0.1