BAS20W

BAS19W SEMTECH_ELEC | Alldatasheet

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Dated：02/05/2013 Rev ：03 ® SEMTECH ELECTRONICS LTD. Subsidiary of Sino-Tech International (BVI) Limited BAS19W, BAS20W, BAS21W Silicon Epitaxial Planar Diodes High Voltage Switching Diodes Absolute Maximum Ratings (T a = 25℃) Parameter Symbol Value Unit Reverse Voltage BAS19W BAS20W BAS21W VR 120 200 250 V Continuous Forward Current IF(AV) 200 mA Repetitive Peak Forward Current IFRM 625 mA Non-repetitive Peak Forward Surge Current at t = 1 s at t = 1 μs IFSM 0.5 2.5 A Total Device Dissipation Ptot 250 mW Thermal Resistance Junction to Ambient RθJA 357 ℃/W Junction and Storage Temperature Range Tj, Tstg - 55 to + 150 ℃ Characteristics at Ta = 25℃ Parameter Symbol Min. Max. Unit Reverse Breakdown Voltage at IR = 100 µA at IR = 100 µA at IR = 100 µA BAS19W BAS20W BAS21W V (BR)R 120 200 250 V Forward Voltage a t I F = 100 mA a t IF = 200 mA VF 1.25 V Reverse Current at VR = 100 V at VR = 150 V at VR = 200 V at VR = 100 V, Tj = 150℃ at VR = 150 V, Tj = 150℃ at VR = 200 V, Tj = 150℃ BAS19W BAS20W BAS21W BAS19W BAS20W BAS21W I R 0.1 0.1 0.1 100 100 100 µA Total Capacitance at VR = 0, f = 1 MHz Ctot - 5 pF Reverse Recovery Time at IF = IR= 30 mA, IR(REC) = 3 mA, RL = 100 Ω trr - 50 ns BAS19W BAS20W BAS21W 2 1 BAS21AW BAS21CW 1 2 BAS21SW Marking Code: BAS19W~BAS21W: F5 B A S 2 1 A W : F 2 B A S 2 1 C W : F 3 BAS21SW: F4 SOT-323 Plastic Package SEMTECH

Dated：02/05/2013 Rev ：03 ® SEMTECH ELECTRONICS LTD. Subsidiary of Sino-Tech International (BVI) Limited BAS19W, BAS20W, BAS21W SEMTECH