BAS19W PANJIT | Alldatasheet
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Technical content
PAGE . 1STAD-MAR.03.2004 DATA SHEET BAS19W~BAS21W .087(2.2) .054(1.35) .016(.40) .087(2.2) .044(1.1) .004(.10)MIN. .070(1.8) .045(1.15) .047(1.20) .004(.10)MAX. .002(.05) .078(.20) .078(2.0) .035(0.9) SOT-323 Unit: inch (mm) SURFACE MOUNT SWITCHING DIODES VOLTAGE 120-250 Volts 200mWatts
FEATURES
- Fast switching speed. Surface mount package Ideally Suited for Automatic insertion Electrically Identical to Standard JEDEC High Conductance Both normal and Pb free product are available : Normal : 80~95% Sn, 5~20% Pb Pb free: 98.5% Sn above MECHANICAL DATA Case: SOT-323, Plastic Terminals: Solderable per MIL-STD-202, Method 208 Approx. Weight: 0.00 52 gram POWER MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25O C ambient temperature unless otherwise specified. For capacitive load, derate current by 20%. NOTE: 1. CJ at VR =0, f=1MHZ 2.From IF=10mA to IR =1mA, VR =6Volts, RL=100Ω RETEMARAPL OBMYSW 91SABW 02SABW 12SABS TINU edoCgnikraM 8A0 8A2 8A egatloVesreveR VR 0010 510 02V egatloVesreveRkaeP VRM 0210 020 52V htiwnoitacifitceRevaWflaH,)egarevA(tnerruCdeifitceR zH05=>fdnadaoLevitsiseR IO 002A m su0.1,tnerruCegruSdrawroFkaeP IFSM 5.2A 52evobAetareDnoitapissiDrewoP OCP TOT 002W m A1.0taegatloVdrawroFmumixaM VF 0.1V egatloVgnikcolBCDdetaRtatnerruCesreveRCDmumixaM TJ 52= OC IR 1.0A u )1setoN(ecnaticapaCnoitcnuJlacipyT CJ 0.5F p )2setoN(yrevoceResreveRmumixaM TRR 05s n ecnatsiseRlamrehTmumixaM Rθ AJ5 26 O W/C egnaRerutarepmeTegarotSdnanoitcnuJgnitarepO TJ,TSTG 051+ot55- OC SINGLE
PAGE . 2STAD-MAR.03.2004 100 1000 01 . 0 2 . 0 1.0 0.1 0.01 6.0 4.5 3.0 1.5 24 6 8 T= 2 5 CJ O 200 300 400 100 50 100 150 200 P POWER DISSIPATION (mW) D,DIODE CAPACITANCE, pF AMBIENT TEMPERATURE( C) O FORWARD VOLTAGE, VOLTS REVERSE VOLTAGE, VOLTS FORWARD CURRENT, mA T , JUNCTION TEMPERATURE, CJ O I , LEAKAGE CURRENT, uAR 0.01 0.1 1.0 100 100 200 Fig.2 LEAKAGE CURRENT vs JUNCTION TEMPERATUREFIG. 1-TYPICAL FORWARD CHARACTERISTIC FIG. 4 POWER DERATING CURVEFIG. 3 TYPICAL JUNCTION CAPACITANCE