BASXW GWSEMI | Alldatasheet
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Silicon Epitaxial Planar Diodes High Voltage Switching Diodes Absolute Maximum Ratings (T a = 25℃) Parameter Symbol Value Unit Reverse Voltage BAS19W BAS20W BAS21W V R 120 200 250 V Continuous Forward Current I F(AV) 200 mA Repetitive Peak Forward Current I FRM 625 mA Non-repetitive Peak Forward Surge Current at t = 1 s at t = 1 μs I FSM 0.5 2.5 A Total Device Dissipation P tot 250 mW Thermal Resistance Junction to Ambient R θJA 357 ℃/W Junction and Storage Temperature Range T j , T stg - 55 to + 150 ℃ Characteristics at T a = 25℃ Parameter Symbol Min. Max. Unit Reverse Breakdown Voltage at I R = 100 µA at I R = 100 µA at I R = 100 µA BAS19W BAS20W BAS21W V (BR)R 120 200 250 V Forward Voltage a t I F = 100 mA a t I F = 200 mA V F 1.25 V Reverse Current at V R = 100 V at V R = 150 V at V R = 200 V at V R = 100 V, T j = 150℃ at V R = 150 V, T j = 150℃ at V R = 200 V, T j = 150℃ BAS19W BAS20W BAS21W BAS19W BAS20W BAS21W I R 0.1 0.1 0.1 100 100 100 µA Total Capacitance at V R = 0, f = 1 MHz C tot - 5 pF Reverse Recovery Time at I F = I R = 30 mA, I R(REC) = 3 mA, R L = 100 Ω t rr - 50 ns BAS19W BAS20W BAS21W BAS21AW BAS21CW BAS21SW Marking Code: BAS19W~BAS21W: T3 B A S 2 1 A W : F 2 B A S 2 1 C W : F 3 BAS21SW: SOT-323 Plastic Package ASxW-SERIES B
B
Min. Max. Min. Max. A 0.900 1.100 0.035 0.043 A1 0.000 0.100 0.000 0.004 A2 0.900 1.000 0.035 0.039 b 0.200 0.400 0.008 0.016 c 0.080 0.150 0.003 0.006 D 2.000 2.200 0.079 0.087 E 1.150 1.350 0.045 0.053 E1 2.150 2.450 0.085 0.096 e e1 1.200 1.400 0.047 0.055 L L1 0.260 0.460 0.010 0.018 θ 0° 8° 0° 8° 0.525 REF. 0.021 REF. Symbol Dimensions In Millimeters Dimensions In Inches 0.650 TYP. 0.026 TYP. ASxW-SERIES B