BASXXT GWSEMI | Alldatasheet

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Technical content

 Fast Switching Speed  Surface Mount Package Ideally Su ited for Automatic Insertion  For General Purpose Switching Applications  High Conductance MARKING: BAS19:JP MAXIMUM RATINGS ( T A =25℃ unless otherwise noted) Symbol Parameter BAS19 BAS20 Unit V RRM Repetitive Peak Reverse Voltage 120 200 V V RWM Working Peak Reverse Voltage 100 150 V I O Average Rectified Output Current 200 mA I FSM Non-Repetitive Peak Forward Surge Current @t= 2.5 A P d Power Dissipation 250 mW R θJA Thermal Resistance from Junction to Ambient 500 ℃/W T J Junction temperature 150 ℃ T stg Storage Temperature -55 ~ +150 ℃

ELECTRICAL CHARACTERISTICS

A = 25°C unless otherwise specified Parameter Symbol Test Condition Min Typ Max Unit Reverse breakdown voltage BAS19 B A S 2 0 V (BR) I R =100μA 120 200 V R e ver s e c u r r e n t B A S 1 9 B A S 2 0 I R V R =100V V R =150V 0.1 μA I F =100mA 1 V Forward voltage V F I F =200mA 1.25 V Diodes capacitance C D V R =0V, f=1MHz 5 pF Reveres recovery time t rr I F R =30mA,I rr =0.1*I R 50 ns BAS20:JR 8.3 ms ASxxT-SERIES B

0.6 0.8 1.0 1.2 1.4 1.6 0 25 50 75 100 125 150 100 150 200 250 300 0.01 0.1 100 1000 0 40 80 120 160 200 100 1000 T a =25 f=1MHz Capacitance Characteristics REVERSE VOLTAGE V R (V) CAPACITANCE BETWEEN TERMINALS C T (pF) Power Derating Curve POWER DISSIPATION P D (mW) AMBIENT TEMPERATURE T a ( ) Pulsed Forward Characteristics T a =100 o C T a =25 o C FORWARD CURRENT I F (mA) FORWARD VOLTAGE V F (V) Reverse Characteristics T a =100 o C T a =25 o C REVERSE CURRENT I R (nA) REVERSE VOLTAGE V R (V) Pulsed ASxxT-SERIES B

B Plastic surface mounted package; 3 leads SOT-523 PACKAGE OUTLINE