BAS20LT1

BAS19LT1 ONSEMI | Alldatasheet

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• Pb−Free Packages are Available MAXIMUM RATINGS Rating Symbol Value Unit Continuous Reverse Voltage BAS19 BAS20 BAS21 VR 120 200 250 Vdc Repetitive Peak Reverse Voltage BAS19 BAS20 BAS21 VRRM 120 200 250 Vdc Continuous Forward Current IF 200 mAdc Peak Forward Surge Current IFM(surge) 625 mAdc Maximum Junction Temperature TJmax 150 °C Power Dissipation (Note 4) PD 385 mW Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. HIGH VOLTAGE SWITCHING DIODE Preferred devices are recommended choices for future use and best overall value. CATHODE ANODE Jx M MARKING DIAGRAMS Jx = Specific Device Code x = P, R or S M = Date Code http://onsemi.com CATHODE ANODE CATHODE ANODE XX d XX = Specific Device Code d = Date Code SOT−23 (TO−236) CASE 318 STYLE 8 SC−88A (SOT−353) CASE 419A SOT−23 SC−88A

ORDERING INFORMATION

See detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet.

BAS19LT1, BAS20LT1, BAS21LT1, BAS21DW5T1 http://onsemi.com THERMAL CHARACTERISTICS (SOT−23) Characteristic Symbol Max Unit Total Device Dissipation FR−5 Board (Note 2) TA = 25°C Derate above 25°C PD 225 1.8 mW mW/ °C Thermal Resistance Junction−to−Ambient (SOT−23) R JA 556 °C/W Total Device Dissipation Alumina Substrate (Note 3) TA = 25°C Derate above 25°C PD 300 2.4 mW mW/ °C Thermal Resistance Junction−to−Ambient R JA 417 °C/W Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C THERMAL CHARACTERISTICS (SC−88A) Characteristic Symbol Max Unit Power Dissipation (Note 4) PD 385 mW Thermal Resistance − Junction−to−Ambient Derate Above 25°C R JA 328 3.0 °C/W mW/ °C Maximum Junction Temperature TJmax 150 °C Operating Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit Reverse Voltage Leakage Current (VR = 100 Vdc) BAS19 (VR = 150 Vdc) BAS20 (VR = 200 Vdc) BAS21 (VR = 100 Vdc, TJ = 150°C) BAS19 (VR = 150 Vdc, TJ = 150°C) BAS20 (VR = 200 Vdc, TJ = 150°C) BAS21 IR 0.1 0.1 0.1 100 100 100 Adc Reverse Breakdown Voltage (IBR = 100 Adc) BAS19 (IBR = 100 Adc) BAS20 (IBR = 100 Adc) BAS21 V(BR) 120 200 250 Vdc Forward Voltage (IF = 100 mAdc) (IF = 200 mAdc) VF 1.0 1.25 Vdc Diode Capacitance (VR = 0, f = 1.0 MHz) C D − 5.0 pF Reverse Recovery Time (IF = IR = 30 mAdc, IR(REC) = 3.0 mAdc, RL = 100) trr − 50 ns

Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (IF) of 30 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 30 mA.

50 OUTPUT

50 INPUT

Figure 1. Recovery Time Equivalent Test Circuit Figure 2. Forward Voltage Figure 3. Reverse Leakage

BAS19LT1, BAS20LT1, BAS21LT1, BAS21DW5T1 http://onsemi.com Device Package Shipping† BAS19LT1 SOT−23

3000 T /R lBAS19LT1G SOT−23

(Pb−Free)

3000 Tape/Reel

BAS19LT3 SOT−23

10000 T /R lBAS19LT3G SOT−23

(Pb−Free)

10000 Tape/Reel

BAS20LT1 SOT−23

3000 T /R lBAS20LT1G SOT−23

(Pb−Free) BAS21LT1 SOT−23

3000 T /R lBAS21LT1G SOT−23

(Pb−Free) BAS21LT3 SOT−23

10000 T /R lBAS21LT3G SOT−23

(Pb−Free) BAS21DW5T1 SC−88A

3000 T /R lBAS21DW5T1G SC−88A

(Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.

BAS19LT1, BAS20LT1, BAS21LT1, BAS21DW5T1 http://onsemi.com PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−09 ISSUE AH DIM A MIN MAX MIN MAX MILLIMETERS 0.1102 0.1197 2.80 3.04 INCHES B 0.0472 0.0551 1.20 1.40 C 0.0385 0.0498 0.99 1.26 D 0.0140 0.0200 0.36 0.50 G 0.0670 0.0826 1.70 2.10 H 0.0040 0.0098 0.10 0.25 J 0.0034 0.0070 0.085 0.177 K 0.0180 0.0236 0.45 0.60 L 0.0350 0.0401 0.89 1.02 S 0.0830 0.0984 2.10 2.50 V 0.0177 0.0236 0.45 0.60 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIUMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318-01, -02, AND -06 OBSOLETE, NEW STANDARD 318-09. A L BS V G D H C K J STYLE 8: PIN 1. ANODE 2. NO CONNECTION 3. CATHODE mm inchesSCALE 10:1 0.8 0.031 0.9 0.035 0.95 0.0370.95 0.037 2.0 0.079 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. SOLDERING FOOTPRINT*

BAS19LT1, BAS20LT1, BAS21LT1, BAS21DW5T1 http://onsemi.com PACKAGE DIMENSIONS NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 419A−01 OBSOLETE. NEW STANDARD 419A−02. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. DIM A MIN MAX MIN MAX MILLIMETERS 1.80 2.200.071 0.087 INCHES B 1.15 1.350.045 0.053 C 0.80 1.100.031 0.043 D 0.10 0.300.004 0.012 G 0.65 BSC0.026 BSC J 0.10 0.250.004 0.010 K 0.10 0.300.004 0.012 N 0.20 REF0.008 REF S 2.00 2.200.079 0.087 B0.2 (0.008) MM 12 3 A G S D 5 PL H C N J K −B− SC−88A (SOT−353) CASE 419A−02 ISSUE G mm inchesSCALE 20:1 0.65 0.025 0.65 0.025 0.50 0.0197 0.40 0.0157 1.9 0.0748 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. SOLDERING FOOTPRINT* ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION N. American Technical Support: 800−282−9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Phone : 81−3−5773−3850 BAS19LT1/D LITERATURE FULFILLMENT : Literature Distribution Center for ON Semiconductor P.O. Box 61312, Phoenix, Arizona 85082−1312 USA Phone : 480−829−7710 or 800−344−3860 Toll Free USA/Canada Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative.