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/c183 /c183 /c183 @ T A = 25/c176C unless otherwise specified /c183 /c183 Mechanical Data Maximum Ratings and Electrical Characteristics /c183 /c183 /c183 200mA Surface Mount Small Signal Switching Diode Component in accordance to RoHS 2002/95/EC Lead (Pb)-free component These diodes are also available in other Fast switching diode in case SOT-23, Silicon Epitaxial Planar Diode especially suited for automatic insertion. case styles including:the SOD-123 case with the type designations BAV19W-V to BAV21W-V, the Mini-MELF case with the type designation BAV101 to BAV103, the DO-35 case with the type designations BAV19-V to BAV21-V and the SOD- 323 case with type designation BAV19WS-V to BAV21WS-V. and WEEE 2002/96/EC Case: SOT-23 Plastic case Weight: approx. 8.8 mg Packaging Codes/Options: GS18 / 10 k per 13" reel (8 mm tape), 10 k/box GS08 / 3 k per 7" reel (8 mm tape), 15 k/box A M J LD F B C H K G SOT-23 Dim Min Max A 0.37 0.51 B 1.20 1.40 C 2.30 2.50 D 0.89 1.03 F 0.45 0.60 G 1.78 2.05 H 2.80 3.00 J 0.013 0.10 K 0.903 1.10 L 0.45 0.61 M 0.085 0.180 α 0° 8° All Dimensions in mm Parameter Test condition Part Symbol Value Unit Continuous reverse voltage BAS19-V V R 100 V BAS20-V V R 150 V BAS21-V V R 200 V Repetitive peak reverse voltage BAS19-V V RRM 120 V BAS20-V V RRM 200 V BAS21-V V RRM 250 V Non-repetitive peak forward current t = 1 µsI FSM 2.5 A Non-repetitive peak forward surge current t = 1 s I FSM 0.5 A Maximum average forward rectified current (av. over any 20 ms period) I F(AV) 200 mA DC forward current T amb = 25 °C I F 200 mA Repetitive peak forward current I FRM 625 mA Power dissipation T amb = 25 °C P tot 250 mW Parameter Test condition Symbol Min Typ. Max Unit Forward voltage I F = 100 mA V F 1.0 V I F = 200 mA V F 1.25 V Leakage current V R = V Rmax I R 100 nA V R = V Rmax , T j = 150 °C I R 100 µA Dynamic forward resistance I F = 10 mA r f 5 Ω Diode capacitance V R = 0, f = 1 MHz C tot 5p F Reverse recovery time I F = I R = 30 mA, R L = 100 Ω, I rr = 3 mA t rr 50 ns BAS19-V—BAS21-V