BAS20

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Dated : 16/03/2015 Rev:01 ® SEMTECH ELECTRONICS LTD. BAS19, BAS20, BAS21 Silicon Epitaxial Planar Diodes High Voltage Switching Diodes Absolute Maximum Ratings (T a = 25 OC) Parameter Symbol Value Unit Reverse Voltage BAS19 BAS20 BAS21 V R 120 200 250 V Continuous F orward Current IF(AV) 200 mA Repetitive Peak Forward Current IFRM 625 mA Non-repetitive Peak Forward Surge Current at t = 1 s at t = 1 μs IFSM 0.5 2.5 A Total Device Dissipation P tot 350 mW Thermal Resistance Junction to Ambient R θJA 357 OC/W Junction and Storage Temperature Range T j, Tstg - 55 to + 150 OC Characteristics at Ta = 25 OC Parameter Symbol Min. Max. Unit Forward Voltage a t IF = 100 mA a t IF = 200 mA VF 1.25 V V Reverse Breakdown Voltage at IR = 100 µA at IR = 100 µA at IR = 100 µA BAS19 BAS20 BAS21 V (BR) 120 200 250 V V V Reverse Current at VR = 100 V at VR = 150 V at VR = 200 V at VR = 100 V, Tj = 150 OC at VR = 150 V, Tj = 150 OC at VR = 200 V, Tj = 150 OC BAS19 BAS20 BAS21 BAS19 BAS20 BAS21 I R 0.1 0.1 0.1 100 100 100 µA µA µA µA µA µA Total Capacitance at VR = 0, f = 1 MHz Ctot - 5 pF Reverse Recovery Time at IF = IR= 30 mA, IR(REC) = 3 mA, RL = 100 Ω trr - 50 ns Marking Code: HC TO-236 Plastic Package

Dated : 16/03/2015 Rev:01 ® SEMTECH ELECTRONICS LTD. BAS19, BAS20, BAS21