BAS19_18 HDSEMI | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 4
Technical content
Features
Marking: H igh Diode Semiconductor SOT- 23 Electrical Characteristics (Ta=25℃ Unless otherwise specified） BAS19 : JP Switching Diodes SOT-23 Plastic-Encapsulate Diodes
Applications
Surface Mount Package Ideally Su ited for Automatic Insertion For General Purpose Switching Applications High Conductance BAS20 : JR Symbol Parameter BAS19 BAS20 Unit V RRM Repetitive Peak Reverse Voltage 120 200 V V RWM Working Peak Reverse Voltage 100 150 V I O Average Rectified Output Current 200 mA I FSM Non-Repetitive Peak Forward Surge Current @t= 2.5 A P d Power Dissipation 250 mW R θJA Thermal Resistance from Junction to Ambient 500 ℃/W T J Junction temperature 150 ℃ T stg Storage Temperature -55 ~ +150 ℃ 8.3 ms Parameter Symbol Test Condition Min Typ Max Unit Reverse breakdown voltage BAS19 B A S 2 0 V (BR) I R =100μA 120 200 V R e ver s e c u r r e n t B A S 1 9 B A S 2 0 I R V R =100V V R =150V 0.1 μA I F =100mA 1 V Forward voltage V F I F =200mA 1.25 V Diodes capacitance C D V R =0V, f=1MHz 5 pF Reveres recovery time t rr I F R =30mA,I rr =0.1*I R 50 ns
H igh Diode Semiconductor Typical Characteristics 048 12 16 2 0 0.6 0.8 1.0 1.2 1.4 1.6 0 25 50 75 100 125 150 100 150 200 250 300 0.01 0.1 100 1000 0 40 80 120 160 200 100 1000 T a =25 f=1MHz Capacitance Characteristics REVERSE VOLTAGE V R (V) CAPACITANCE BETWEEN TERMINALS C T (pF) Power Derating Curve POWER DISSIPATION P D (mW) AMBIENT TEMPERATURE T a ( ) Pulsed Forward Characteristics T a =100 o C T a =25 o C FORWARD CURRENT I F (mA) FORWARD VOLTAGE V F (V) Reverse Characteristics T a =100 o C T a =25 o C REVERSE CURRENT I R (nA) REVERSE VOLTAGE V R (V) Pulsed
H igh Diode Semiconductor Package Outline Dimensions SOT-23 Suggested Pad Layout SOT-23
Reel Taping Specifications For Surface Mount Devices-SOT-23 H igh Diode Semiconductor