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Technical content
Features
Small package High voltage Small total capacitance SOT-23 Absolute Maximum Ratings(TA=25℃) Parameter Symbol Value Unit BAS19 Reverse Voltage BAS20 BAS21 VR 120 200 250 V Continuous Forward Current IF(AV) 200 mA Repetitive Peak Forward Current IFRM 625 mA Non-repetitive Peak Forward Surge Current at t = 1 s at t = 1 μs IFSM 0.5 2.5 A Total Device Dissipation PD 350 mW Thermal Resistance Junction to Ambient RθJA 357 ℃/W Junction and Storage Temperature Range TJ, TSTG - 55 to + 150 ℃ Electrical Characteristics(TA=25℃) Parameter Symbol Min. Max. Unit Forward Voltage at IF = 100 mA at IF = 200 mA VF 1.25 V Reverse Breakdown Voltage at IR = 100 µA BAS19 at IR = 100 µA BAS20 at IR = 100 µA BAS21 VR 120 200 250 Reverse Current at VR = 100 V BAS19 at VR = 150 V BAS20 at VR = 200 V BAS21 at VR = 100 V, TJ= 150 O C BAS19 at VR = 150 V, TJ= 150OC BAS20 at VR = 200 V, TJ= 150 O C BAS21 IR 0.1 0.1 0.1 100 100 100 µA Total Capacitance at VR = 0, f = 1 MHz Ctot - 5 pF Reverse Recovery Time at IF = IR= 30 mA, IR(REC) = 3 mA, RL = 100 Ω trr - 50 ns V Marking: BAS19: FC BAS20: GC BAS21: HC
Silicon Epitaxial Planar Switching Diode 2 / 3www.pingjingsemi.com Revision：1.1 Oct-2017 Rating and Characteristics Curves
Silicon Epitaxial Planar Switching Diode 3 / 3www.pingjingsemi.com RReevviissioonn：：11..1 OOcctt-- 22001177 Package Outline SOT-23 1.0 0.8 2.2 1.9 1.0 0.8 SOT-23 Recommended soldering pad Symbol Dimensions in millimeter Min. Typ. Max. A 0.900 1.025 1.150 A1 0.000 0.050 0.100 b 0.300 0.400 0.500 c 0.080 0.115 0.150 D 2.800 2.900 3.000 E 1.200 1.300 1.400 HE 2.250 2.400 2.550 e 1.800 1.900 2.000 L 0.550REFL1 0.300 0.500 θ 0° 8°
Ordering Information
SOT-23 3000/Tape&Reel(7inches)