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WEJ ELECTRONIC CO.,LTD BAS116LT1 SURFACE MOUNT SWITCHING DIODE
- Low Leakage Current Applications
- Medium Speed Switching Times ABSOLUTE MAXIMUM RATINGS at Ta=25 Characteristic Symbol Rating Unit Non-Repetitive Peak Reverse Voltage VRM 100 V Peak Repetitive Reverse Voltage working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR V Peak Forward Current IF 200 mAdc Forward Continuous Current(Note) IFM 300 mAdc Power Dissipation (Note) Derate Above 25 PD 300 2.4 mW mW/ Junction Temperature Tj 150 Storage Temperature Tstg -50-150 Package:SOT-23 Note:Diode Ceramic Substrate 10mm 8.0mm 0.7mm ELECTRICAL CHARACTERISTICS at Ta=25 Characteristic Symbol Min Max Unit Test Conditions Forward Voltage VF 0.9 1.0 1.1 1.25 V V V V IF=1.0mA IF=10mA IF=50mA IF=150mA Reverse Breakdown Voltage V (BR) 75 — Vdc I BR = 100 uAdc Reverse Voltage Leakage Current IR 5.0 uA nA VR=75V VR=75V Tj=150 Capacitance Cj 2.0 PF VR=0 f=1.0MHz Reverse Recovery Time Trr 3.0 uS IF=10mA to IR=10mA Note:Diode On Ceramic Substrate 10mm 8.0mm 0.7mm DEVICE MARKING: BAS116LT1=JV Http:// www.wej.cn E-mail:wej@yongerjia.com WEJ ELECTRONIC CO. RoHS