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Document overview

Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
PDF pages: 9

Technical content

Product proﬁle

1.1 General description

Low leakage switching diode, encapsulated in a SOD123F small SMD plastic package.

1.2 Features

■ Small and ﬂat lead SMD plastic package ■ Low leakage current

1.3 Applications

■ General-purpose switching

1.4 Quick reference data

75 V, low leakage diode in small SOD123F package

Rev. 01 — 11 April 2005 Product data sheet Table 1: Quick reference data Symbol Parameter Conditions Min Typ Max Unit IF forward current - - 215 mA VR reverse voltage - - 75 V IR reverse current V R = 75 V - 0.003 5.0 nA

Pinning information [1] The marking bar indicates the cathode. 3. Ordering information 4. Marking 5. Limiting values [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. Table 2: Pinning Pin Description Simpliﬁed outline Symbol 1 cathode [1] 2 anode 21 sym001 Table 3: Ordering information Type number Package Name Description Version BAS116H - plastic surface mounted package; 2 leads SOD123F Table 4: Marking codes Type number Marking code BAS116H B1 Table 5: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Per diode V RRM repetitive peak reverse voltage -8 5 V VR reverse voltage - 75 V IF forward current - 215 mA IFRM repetitive peak forward current - 500 mA IFSM non-repetitive peak forward current tp = 1µs- 4 A tp = 1 ms - 1 A tp = 1 s - 0.5 A Ptot total power dissipation Tamb ≤ 25 °C [1] - 375 mW Tj junction temperature - 150 °C Tamb ambient temperature −65 +150 °C Tstg storage temperature −65 +150 °C

Thermal characteristics [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Reﬂow soldering is the only recommended soldering method. 7. Characteristics [1] Pulse test: tp ≤ 300 µs;δ≤ 0.02. [2] When switched from IF = 10 mA to IR = 10 mA; RL = 100Ω ; measured at IR = 1 mA Table 6: Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit R th(j-a) thermal resistance from junction to ambient in free air [1][2] - - 330 K/W R th(j-sp) thermal resistance from junction to solder point - - 70 K/W Table 7: Characteristics Tamb = 25°C unless otherwise speciﬁed. Symbol Parameter Conditions Min Typ Max Unit Per diode V F forward voltage I F = 1 mA [1] - - 0.90 mV IF = 10 mA [1] - - 1.00 mV IF = 50 mA [1] - - 1.10 mV IF = 150 mA [1] - - 1.25 mV IR reverse current V R = 75 V - 0.003 5.0 nA VR = 75 V; Tj = 150°C - 3 80.0 nA C d diode capacitance VR = 0 V; f = 1 MHz - 2 - pF trr reverse recovery time [2] - 0.8 3.0 µs

9397 750 14881 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 — 11 April 2005 4 of 9 Philips Semiconductors BAS116H (1) Tamb = 150°C; typical values (2) Tamb =2 5°C; typical values (3) Tamb =2 5°C; maximum values Based on square wave currents (1) Tj=2 5°C; prior to surge Fig 1. Forward current as a function of forward voltage Fig 2. Non-repetitive peak forward current as a function of pulse duration VR = 75 V (1) Maximum values (2) Typical values T amb =2 5°C; f = 1 MHz Fig 3. Reverse current as a function of junction temperature Fig 4. Diode capacitance as a function of reverse voltage; typical values mlb752300 100 200 IF (mA) 0 1.6 0.8 1.20.4 VF (V) (1) (2) (3) mbg704 102 IFSM (A) 10−1 tp (µs) 11 0 410310 10 2 102 150 200500 mlb754 100 10−1 10−2 10−3 IR (nA) Tj (°C) (1) (2) mbg526 01 0 2 0 155 VR (V) C d (pF)

Test information (1) IR = 1 mA Fig 5. Reverse recovery time test circuit and waveforms trr (1) + IF t output signal tr tp t 10 % 90 %VR input signal V = VR + IF · R S R S = 50 W IF D.U.T. R i = 50 W SAMPLING OSCILLOSCOPE mga881

Package outline 10. Packing information [1] For further information and the availability of packing methods, seeSection16. 11. Soldering Fig 6. Package outline SOD123F 04-11-29Dimensions in mm 1.2 1.0 0.25 0.10 3.6 3.4 2.7 2.5 0.55 0.35 0.70 0.55 1.7 1.5 Table 8: Packing methods The -xxx numbers are the last three digits of the 12NC ordering code.[1] Type number Package Description Packing quantity 3000 10000 BAS116H SO123F 4 mm pitch, 8 mm tape and reel -115 -135 Reﬂow soldering is the only recommended soldering method. Dimensions in mm Fig 7. Reﬂow soldering footprint SOD123F 1.6 1.6 2.9 4.4 1.1 1.22.1 1.1 (2×) solder lands solder resist occupied area solder paste

Revision history Table 9: Revision history Document ID Release date Data sheet status Change notice Doc. number Supersedes BAS116H_1 20050411 Product data sheet - 9397 750 14881 -

Philips Semiconductors BAS116H 9397 750 14881 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 — 11 April 2005 8 of 9 13. Data sheet status [1] Please consult the most recently issued data sheet before initiating or completing a design. [2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. [3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 14. Deﬁnitions Short-form speciﬁcation —The data in a short-form speciﬁcation is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values deﬁnition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the speciﬁcation is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the speciﬁed use without further testing or modiﬁcation. 15. Disclaimers Life support —These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes —Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notiﬁcation (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise speciﬁed. 16. Contact information For additional information, please visit: http://www.semiconductors.philips.com For sales ofﬁce addresses, send an email to: sales.addresses@www.semiconductors.philips.com Level Data sheet status[1] Product status[2][3] Deﬁnition I Objective data Development This data sheet contains data from the objective speciﬁcation for product development. Philips Semiconductors reserves the right to change the speciﬁcation in any manner without notice. II Preliminary data Qualiﬁcation This data sheet contains data from the preliminary speciﬁcation. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the speciﬁcation without notice, in order to improve the design and supply the best possible product. III Product data Production This data sheet contains data from the product speciﬁcation. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notiﬁcation (CPCN).

© Koninklijke Philips Electronics N.V. 2005 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 11 April 2005 Document number: 9397 750 14881 Published in The Netherlands Philips Semiconductors BAS116H

Contents

Product Information

BAS116H specifications and overview.

Summary

75 V, low leakage diode in small SOD123F package Rev. 01-11 April 2005

Description

75 V, low leakage diode in small SOD123F package Rev. 01-11 April 2005

Source title BAS116H Datasheet(PDF) - NXP Semiconductors

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