BAS116 SKTECHNOLGY | Alldatasheet
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V, L ' 05 F4 a BAS116 This switching diode has the following features: * Low Leakage Current Applications * Medium Speed Switching Times ¢ Available in 8 mm Tape and Reel CATHODE ANODE 2 @ MAXIMUM RATINGS A 1 SOT-23 (TO-236AB) Rating Symbol Value Unit Continuous Reverse Voltage Ve 75 Vde Peak Forward Current l- 200 mAdc Peak Forward Surge Current | encsurge) 500 mAdc @ THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR— 5 Board, (1) Pp 225 mW Ta = 25°C Derate above 25°C 1.8 mWwW/°C Thermal Resistance, Junction to Ambient Rega 556 °C/W Total Device Dissipation Pp 300 mW Alumina Substrate, (2) T,= 25°C Derate above 25°C 2.4 mWwi/°C Thermal Resistance, Junction to Ambient Raa 417 °C/W Junction and Storage Temperature Ty, Tstg —55 to +150 °C @ ELECTRICAL CHARACTERISTICS (T ,= 25°C unless otherwise noted) Characteristic Symbol Min Max Unit @ OFF CHARACTERISTICS Reverse Voltage Leakage Current (V p= 75 Vdc ) IR — 5.0 nAdc Reverse Breakdown Voltage Wass m5 _ Vde Forward Voltage (| -= 1.0 mAdc) Ve — 900 mV Diode Capacitance(V p= 0, f = 1.0 MHz) Cp — 2.0 pF Reverse Recovery besides t, _ 3.0 . (l-=lR= 10mAdc, )( Figure 1) REV.08 1 «eT 2
Figure 1. Recovery Time Equivalent Test Circuit