BAS116 KEXIN | Alldatasheet
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Low leakage current: typ. 3 pA Switching time: typ. 0.8 ìs Continuous reverse voltage:max. 75 V Repetitive peak reverse voltage:max. 85 V Repetitive peak forward current:max. 500 mA. Absolute Maximum Ratings Ta = 25 Parameter Symbol Conditions Min Max Unit Repetitive peak reverse voltage V RRM 85 V Continuous reverse voltage V R 75 V Continuous forward current I F 215 mA Repetitive peak forward current I FRM 500 mA square wave; Tj =2 5 prior to surge t=1 s 4 t=1m s 1 t=1s 0 . 5 Total power dissipation P tot Tam b=2 5 ;n o t e1 250 mW Storage temperature T stg -65 +150 Junction temperature T j 150 thermal resistance from junction to tie-point R th j-t p 330 K/W t h e r m a lr e s i s t a n c ef r o mj u n c t i o nt oa m b i e n t Rth j-a 500 K/W ANon-repetitive peak forward current I FSM
2 www.kexin.com.cn BAS116 Electrical Characteristics Ta = 25 Parameter Symbol Conditions Typ Max Unit IF =1m A 0 . 9 IF =1 0m A 1 IF =5 0m A 1 . 1 IF = 150 mA 1.25 VR = 75 V 0.003 5 VR =7 5V ;Tj = 150 38 0 Diode capacitance C d f=1M H z ;VR =0 2 p F when switched from IF =1 0m At oIR =1 0m A ; RL = 100 ;measured at IR =1m A ; nA V trrReverse recovery time 3 s0.8 VFForward voltage IRReverse current Marking Marking JVp